CSD16408Q5
www.ti.com SLPS228A – OCTOBER 2009 – REVISED SEPTEMBER 2010 N-Channel NexFET™ Power MOSFET
FEATURES 1 2 PRODUCT SUMMARY Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
SON 5-mm Г— 6-mm Plastic Package APPLICATIONS VDS Drain-to-source voltage 25 V Qg Gate charge, total (4.5 V) 6.7 nC Qgd Gate charge, gate-to-drain rDS(on) Drain-to-source on-resistance VGS(th) Threshold voltage Point-of-Load Synchronous Buck in
Networking, Telecom and Computing Systems
Optimized for Control FET Applications DESCRIPTION S 8 1 D 7 2 mΩ Package Media CSD16408Q5 13-inch
(33-cm)
reel D 6 3 5 4 V Qty Ship 2500 Tape and
reel ABSOLUTE MAXIMUM RATINGS
VALUE UNIT VDS Drain-to-source voltage 25 V VGS Gate-to-source voltage –12 to 16 V Continuous drain current, TC = 25°C 113 A Continuous drain current (1) 22 A IDM Pulsed drain current, TA = 25°C (2) 141 A PD Power dissipation (1) 3.1 W TJ,
TSTG Operating junction and storage temperature
range –55 to 150 °C EAS Avalanche energy, single-pulse
ID = 23 A, L = 0.1 mH, RG = 25 Ω 126 mJ D
P0094-01 (1)
(2) Typical RqJA = 41В°C/W on 1-inch2 (6.45-cm2), 2-oz.
(0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4
PCB.
Pulse duration ≤300 ms, duty cycle ≤2%
put a break here is force notes closer to the table
put a break here is force notes closer to the table rDS(on) vs VGS GATE CHARGE
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