Datasheet Texas Instruments CSD19536KTTT — 数据表

制造商Texas Instruments
系列CSD19536KTT
零件号CSD19536KTTT
Datasheet Texas Instruments CSD19536KTTT

CSD19536KTT 100 V N通道NexFET™功率MOSFET 3-DDPAK / TO-263

数据表

CSD19536KTT 100-V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 915 Kb, 修订版: B, 档案已发布: Aug 16, 2016
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价格

状态

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityNo

打包

Pin3
Package TypeKTT
Industry STD TermTO-263
JEDEC CodeR-PSFM-G
Package QTY50
CarrierSMALL T&R
Device MarkingCSD19536KTT
Width (mm)8.41
Length (mm)10.18
Thickness (mm)4.44
Pitch (mm)2.54
Max Height (mm)4.83
Mechanical Data下载

参数化

ConfigurationSingle
ID, Silicon limited at Tc=25degC272 A
ID, package limited200 A
IDM, Max Pulsed Drain Current(Max)400 A
PackageD2PAK mm
QG Typ118 nC
QGD Typ17 nC
Rds(on) Max at VGS=10V2.4 mOhms
VDS100 V
VGS20 V
VGSTH Typ2.5 V

生态计划

RoHSCompliant
Pb FreeYes

模型线

系列: CSD19536KTT (2)

制造商分类

  • Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor