Datasheet Texas Instruments CSD19538Q2 — 数据表

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SLPS582A – JULY 2016 – REVISED JANUARY 2017 CSD19538Q2 100-V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low-Thermal Resistance
Avalanche Rated
Lead Free
RoHS Compliant
Halogen Free
SON 2-mm Г— 2-mm Plastic Package TA = 25В°C TYPICAL VALUE Drain-to-Source Voltage 100 V Qg Gate Charge Total (10 V) 4.3 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage Power Over Ethernet (PoE)
Power Sourcing Equipment (PSE)
Motor Control DEVICE QTY CSD19538Q2 3000 CSD19538Q2T This 100-V, 49-mО©, SON 2-mm Г— 2-mm NexFETв„ў
power MOSFET is designed to minimize losses in
power conversion applications.
Top View 1 6 3.2 V 5 2 S 250 MEDIA PACKAGE SHIP 7-Inch Reel SON
2.00-mm x 2.00-mm
Plastic Package Tape
and
Reel VALUE UNIT Drain-to-Source Voltage 100 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package Limited) 14.4 Continuous Drain Current (Silicon Limited), …