Datasheet Texas Instruments INA219BIDR — 数据表
| 制造商 | Texas Instruments |
| 系列 | INA219 |
| 零件号 | INA219BIDR |
26V，双向，零漂移，高端，I2C输出电流/功率监控器8-SOIC -40至125
数据表
INA219 ZerГё-Drift, Bidirectional Current/Power Monitor With I2C Interface datasheet
PDF, 1.2 Mb, 修订版: G, 档案已发布: Oct 11, 2014
从文件中提取
价格
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
打包
| Pin | 8 |
| Package Type | D |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Width (mm) | 3.91 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1.58 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.75 |
| Mechanical Data | 下载 |
参数化
| Bandwidth | 5.5 kHz |
| CMRR(Min) | 120 dB |
| Common Mode Voltage(Max) | 26 V |
| Digital Interface | I2C |
| Features | Bi-directional,I2C,Programmable Gain |
| Gain | 1,0.5,0.25,0.125 V/V |
| Gain Error | 0.5 % |
| Gain Error Drift(Max) | 83 ppm/В°C |
| Input Offset (+/-)(Max) | 50 uV |
| Input Offset Drift (+/-)(Max) | 0.1 uV/C |
| Input Offset Drift (+/-)(Typ) | 0.1 uV/C |
| Iq(Max) | 1 mA |
| Operating Temperature Range | -40 to 125,to C |
| Package Group | SOIC |
| Package Size: mm2:W x L | 8SOIC: 29 mm2: 6 x 4.9(SOIC) PKG |
| Rating | Catalog |
| Supply Voltage(Max) | 5.5 V |
| Supply Voltage(Min) | 3 V |
生态计划
| RoHS | Compliant |
设计套件和评估模块
- Evaluation Modules & Boards: INA219EVM
INA219EVM Evaluation Module
Lifecycle Status: Active (Recommended for new designs)
应用须知
- Energy and Power Monitoring with Digital Current SensorsPDF, 90 Kb, 档案已发布: May 25, 2017
- Integrating The Current Sensing Signal Path (Rev. A)PDF, 103 Kb, 修订版: A, 档案已发布: Dec 2, 2016
- Integrated Current Sensing Analog-to-Digital ConverterPDF, 88 Kb, 档案已发布: Dec 21, 2016
- Understanding the I2C BusPDF, 124 Kb, 档案已发布: Jun 30, 2015
模型线
系列: INA219 (9)
制造商分类
- Semiconductors > Amplifiers > Current Sense Amplifiers > Current Sense Power / Current Monitors