Datasheet Texas Instruments SN74CBT6800CDW — 数据表

具有预充电输出的10位FET总线开关，用于带电插入和-2 V下冲保护24-SOIC -40至85

数据表

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Lifecycle Status	Active (Recommended for new designs)
Manufacture's Sample Availability	No

Additional Features	Powered off protection,-2V undershoot protection,Pre-charged signal path
Bandwidth	200 MHz
Configuration	1:1 SPST
ESD Charged Device Model	1 kV
ESD HBM	2 kV
Input/Ouput Voltage(Max)	5.5 V
Input/Output Continuous Current(Max)	128 mA
Input/Output OFF-state Capacitance(Typ)	5.5 pF
Input/Output ON-state Capacitance(Typ)	13.5 pF
Number of Channels	10
OFF-state leakage current(Max)	10 µA
ON-state leakage current(Max)	10 µA
Operating Temperature Range	-40 to 85 C
Package Group	SOIC
Package Size: mm2:W x L	24SOIC: 160 mm2: 10.3 x 15.5(SOIC) PKG
Rating	Catalog
Ron(Max)	12 Ohms
Ron(Typ)	3 Ohms
Supply Current(Max)	3 uA
Supply Range	5.5 Max
VIH(Min)	2 V
VIL(Max)	0.8 V
Vdd(Max)	5.5 V
Vdd(Min)	4 V
Vss(Max)	N/A V
Vss(Min)	N/A V

RoHS

Compliant

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系列: SN74CBT6800C (5)