Datasheet Texas Instruments CSD17573Q5BT — 数据表

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SLPS492B – JUNE 2014 – REVISED APRIL 2017 CSD17573Q5B 30-V N-Channel NexFET™ Power MOSFETs
1 Features 1 Product Summary Low Qg and Qgd
Ultra-Low RDS(on)
Low-Thermal Resistance
Avalanche Rated
Lead-Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package TA = 25°C 30 V Qg Gate Charge Total (4.5 V) 49 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage 0.84 mΩ 1.4 V DEVICE QTY MEDIA PACKAGE SHIP CSD17573Q5B 2500 13-Inch Reel CSD17573Q5BT 250 7-Inch Reel SON
5.00-mm Г— 6.00-mm
Plastic Package Tape
and
Reel Absolute Maximum Ratings 8 1 VALUE UNIT VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package Limited) 100 Continuous Drain Current (Silicon Limited),
TC = 25В°C 332 ID Top View
D IDM Continuous Drain Current(1) 43 Pulsed Drain Current(2) 400 Power Dissipation(1) 3.2 Power Dissipation, TC = 25В°C 195 S 2 7 D PD S 3 6 D TJ,
Tstg Operating Junction,
Storage Temperature EAS Avalanche Energy, Single Pulse …