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SLPS368A – SEPTEMBER 2012 – REVISED JANUARY 2015 CSD18503KCS 40 V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Logic Level
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
TO-220 Plastic Package TA = 25В°C DC-DC Conversion
Secondary Side Synchronous Rectifier
Motor Control UNIT Drain-to-Source Voltage 40 V Qg Gate Charge Total (10 V) 30 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage 4.6 nC VGS = 4.5 V 5.4 mΩ VGS = 10 V 3.6 mΩ 1.9 Ordering Information 2 Applications TYPICAL VALUE VDS V (1) Device Package Media Qty Ship CSD18503KCS TO-220 Plastic Package Tube 50 Tube (1) For all available packages, see the orderable addendum at
the end of the data sheet. Absolute Maximum Ratings 3 Description TA = 25В°C VALUE UNIT This 40 V, 3.6 mО©, TO-220 NexFETв„ў power
MOSFET has been designed to minimize losses in
power conversion applications. VDS Drain-to-Source Voltage 40 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package limited) 100 Continuous Drain Current (Silicon limited),
TC = 25В°C 142 Continuous Drain Current (Silicon limited),
TC = 100В°C 100 IDM Pulsed Drain Current (1) 358 A PD Power Dissipation 188 W TJ,
Tstg Operating Junction and …
