Datasheet Texas Instruments UCC27210DDAR — 数据表
| 制造商 | Texas Instruments |
| 系列 | UCC27210 |
| 零件号 | UCC27210DDAR |
120V引导，4A峰值，高频高侧低侧驱动器8-SO PowerPAD -40至140
数据表
UCC2721x 120-V Boot, 4-A Peak, High-Frequency High-Side and Low-Side Driver datasheet
PDF, 1.6 Mb, 修订版: F, 档案已发布: Dec 18, 2014
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价格
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
打包
| Pin | 8 |
| Package Type | DDA |
| Industry STD Term | HSOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | 27210 |
| Width (mm) | 3.9 |
| Length (mm) | 4.89 |
| Thickness (mm) | 1.48 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.7 |
| Mechanical Data | 下载 |
参数化
| Bus Voltage | 110 V |
| Channel Input Logic | CMOS |
| Fall Time | 7 ns |
| Input Threshold | TTl,Pseudo-CMOS |
| Input VCC(Max) | 17 V |
| Input VCC(Min) | 8 V |
| Iq | 1 uA |
| Negative Voltage Handling at HS Pin | -12 V |
| Number of Channels | 2 |
| Operating Temperature Range | -40 to 140 C |
| Package Group | SO PowerPAD |
| Peak Output Current | 4 A |
| Power Switch | MOSFET,IGBT,GaNFET |
| Prop Delay | 20 ns |
| Rating | Catalog |
| Rise Time | 8 ns |
| Special Features | N/A |
生态计划
| RoHS | Compliant |
模型线
系列: UCC27210 (8)
制造商分类
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Half-bridge Driver