Datasheet Texas Instruments TLV2369IDR — 数据表
| 制造商 | Texas Instruments |
| 系列 | TLV2369 |
| 零件号 | TLV2369IDR |
具有零交叉失真的800nA，1.8V，轨到轨I / O运算放大器，适用于成本敏感型应用8-SOIC -40至125
数据表
TLVx369 Cost-Optimized, 800-nA, 1.8-V, Rail-to-Rail I/O Operational Amplifier with Zero-Crossover Distortion datasheet
PDF, 1.2 Mb, 档案已发布: May 24, 2016
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价格
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
打包
| Pin | 8 |
| Package Type | D |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | TL2369 |
| Width (mm) | 3.91 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1.58 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.75 |
| Mechanical Data | 下载 |
参数化
| Additional Features | Cost Optimized,EMI Hardened,Zero Crossover |
| Architecture | CMOS |
| CMRR(Min) | 80 dB |
| CMRR(Typ) | 110 dB |
| GBW(Typ) | 0.012 MHz |
| Input Bias Current(Max) | 110 pA |
| Iq per channel(Max) | 0.0013 mA |
| Iq per channel(Typ) | 0.0008 mA |
| Number of Channels | 2 |
| Offset Drift(Typ) | 0.5 uV/C |
| Operating Temperature Range | -40 to 125 C |
| Output Current(Typ) | 10 mA |
| Package Group | SOIC |
| Package Size: mm2:W x L | 8SOIC: 29 mm2: 6 x 4.9(SOIC) PKG |
| Rail-to-Rail | In,Out |
| Rating | Catalog |
| Slew Rate(Typ) | 0.005 V/us |
| Total Supply Voltage(Max) | 5.5 +5V=5, +/-5V=10 |
| Total Supply Voltage(Min) | 1.8 +5V=5, +/-5V=10 |
| Vn at 1kHz(Typ) | 300 nV/rtHz |
| Vos (Offset Voltage @ 25C)(Max) | 2 mV |
生态计划
| RoHS | Compliant |
模型线
系列: TLV2369 (3)
- TLV2369IDGKR TLV2369IDGKT TLV2369IDR
制造商分类
- Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > Ultra-Low-Power Op Amps (<=10uA)