CSD17552Q5A
www.ti.com SLPS428 – NOVEMBER 2012 30-V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17552Q5A FEATURES 1 PRODUCT SUMMARY Ultra Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm Г— 6-mm Plastic Package VDS Drain to Source Voltage 30 V Qg Gate Charge Total (4.5V) 9.0 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On Resistance VGS(th) Threshold Voltage nC
6.1 mΩ VGS = 10V 5.1 mΩ 1.5 V ORDERING INFORMATION
Device Package Media CSD17552Q5A SON 5-mm Г— 6-mm
Plastic Package 13-Inch
Reel APPLICATIONS 2.0
VGS = 4.5V Point of load Synchronous Buck in
Networking, Telecom and Computing Systems
Optimized for Control FET Applications Qty Ship 2500 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25В°C unless otherwise stated VALUE UNIT DESCRIPTION VDS Drain to Source Voltage 30 V The NexFET power MOSFET has been designed to
minimize losses in power conversion applications. VGS Gate to Source Voltage В±20 V Continuous Drain Current, TC = 25В°C 60 A Continuous Drain Current, Silicon Limitted 88 A Continuous Drain Current, TA = 25В°C(1) 17 A IDM Pulsed Drain Current, TA = 25В°C(2) 106 A PD Power Dissipation(1) 3.0 W TJ,
TSTG Operating Junction and Storage
Temperature Range –55 to 150 °C EAS Avalanche Energy, single pulse
ID = 30A, L = 0.1mH, RG = 25Ω 45 mJ ID Figure 1. Top View
S 1 8 D S 2 7 D S 3 6 D (1) Typical RОёJA = 40В°C/W on a 1-inch2 (6.45-cm2), …
