Datasheet Texas Instruments CSD18563Q5A-P — 数据表
制造商 | Texas Instruments |
系列 | CSD18563Q5A |
零件号 | CSD18563Q5A-P |
60V N沟道NexFET功率MOSFET 8-VSONP -55至150
数据表
CSD18563Q5A 60 V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 817 Kb, 修订版: C, 档案已发布: Jan 19, 2016
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价格
状态
Lifecycle Status | Preview (Device has been announced but is not in production. Samples may or may not be available) |
Manufacture's Sample Availability | No |
打包
Pin | 8 |
Package Type | DQJ |
Package QTY | 2500 |
Carrier | LARGE T&R |
Device Marking | CSD18563 |
Width (mm) | 6 |
Length (mm) | 4.9 |
Thickness (mm) | 1 |
Mechanical Data | 下载 |
参数化
Configuration | Single |
ID, Silicon limited at Tc=25degC | 93 A |
IDM, Max Pulsed Drain Current(Max) | 251 A |
Package | SON5x6 mm |
QG Typ | 15 nC |
QGD Typ | 2.9 nC |
RDS(on) Typ at VGS=4.5V | 8.6 mOhm |
Rds(on) Max at VGS=10V | 6.8 mOhms |
Rds(on) Max at VGS=4.5V | 10.8 mOhms |
VDS | 60 V |
VGS | 20 V |
VGSTH Typ | 2 V |
生态计划
RoHS | Compliant |
Pb Free | Yes |
设计套件和评估模块
- Evaluation Modules & Boards: TPS40170EVM-597
Evaluation Module TPS40170 Synchronous PWM Buck Controller with NexFETВ™
Lifecycle Status: Active (Recommended for new designs)
应用须知
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
模型线
系列: CSD18563Q5A (3)
- CSD18563Q5A CSD18563Q5A-P CSD18563Q5AT
制造商分类
- Semiconductors > Power Management > Power MOSFET > N-Channel MOSFET Transistor
其他名称:
CSD18563Q5AP, CSD18563Q5A P