Datasheet Texas Instruments CSD17313Q2Q1T — 数据表

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SLPS427D – OCTOBER 2012 – REVISED SEPTEMBER 2015 CSD17313Q2Q1 30-V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Qualified for Automotive Applications
Optimized for 5-V Gate Drive
Ultra-Low Qg and Qgd
Low Thermal Resistance
Pb-Free
RoHS Compliant
Halogen-Free
SON 2-mm Г— 2-mm Plastic Package TA = 25В°C 30 V Qg Gate Charge Total (4.5 V) 2.1 nC Qgd Gate Charge Gate-to-Drain
Drain-to-Source On
Resistance VGS(th) 0.4
31 mΩ VGS = 4.5 V 26 mΩ VGS = 8 V 24 mΩ Threshold Voltage PART NUMBER 3 Description
This 30-V, 24-mО©, 2-mm x 2-mm SON NexFETв„ў
power MOSFET is designed to minimize losses in
power conversion applications and is optimized for 5V gate drive applications. The 2-mm Г— 2-mm SON
offers excellent thermal performance for the size of
the package. 1.3 QTY MEDIA CSD17313Q2Q1 3000 13-Inch …