Datasheet Texas Instruments TLV333IDR — 数据表
| 制造商 | Texas Instruments |
| 系列 | TLV333 |
| 零件号 | TLV333IDR |
350 kHz，低噪声，RRIO，CMOS运算放大器，用于成本敏感型系统8-SOIC -40至125
数据表
TLVx333 2-ОјV VOS, 0.02-ОјV/В°C, 17-ОјA, CMOS Operational Amplifiers Zero-Drift Series datasheet
PDF, 895 Kb, 档案已发布: Dec 18, 2015
从文件中提取
价格
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
打包
| Pin | 8 |
| Package Type | D |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2500 |
| Carrier | LARGE T&R |
| Device Marking | TLV333 |
| Width (mm) | 3.91 |
| Length (mm) | 4.9 |
| Thickness (mm) | 1.58 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 1.75 |
| Mechanical Data | 下载 |
参数化
| Additional Features | Cost Optimized,EMI Hardened,Zero Drift |
| Architecture | CMOS |
| CMRR(Min) | 106 dB |
| CMRR(Typ) | 130 dB |
| GBW(Typ) | 0.35 MHz |
| Input Bias Current(Max) | 130 pA |
| Iq per channel(Max) | 0.028 mA |
| Iq per channel(Typ) | 0.017 mA |
| Number of Channels | 1 |
| Offset Drift(Typ) | 0.02 uV/C |
| Operating Temperature Range | -40 to 125 C |
| Output Current(Typ) | 5 mA |
| Package Group | SOIC |
| Package Size: mm2:W x L | 8SOIC: 29 mm2: 6 x 4.9(SOIC) PKG |
| Rail-to-Rail | In,Out |
| Rating | Catalog |
| Slew Rate(Typ) | 0.16 V/us |
| Total Supply Voltage(Max) | 5.5 +5V=5, +/-5V=10 |
| Total Supply Voltage(Min) | 1.8 +5V=5, +/-5V=10 |
| Vn at 1kHz(Typ) | 55 nV/rtHz |
| Vos (Offset Voltage @ 25C)(Max) | 0.015 mV |
生态计划
| RoHS | Compliant |
应用须知
- Offset Correction Methods: Laser Trim, e-Trim, and Chopper (Rev. A)PDF, 795 Kb, 修订版: A, 档案已发布: Jul 20, 2017
模型线
系列: TLV333 (5)
- TLV333IDBVR TLV333IDBVT TLV333IDCKR TLV333IDCKT TLV333IDR
制造商分类
- Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > General-Purpose Op Amps