Datasheet Texas Instruments CSD18537NQ5AT — 数据表

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SLPS391B – JUNE 2013 – REVISED JULY 2014 CSD18537NQ5A 60-V N-Channel NexFET™ Power MOSFETs
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5 mm Г— 6 mm Plastic Package TA = 25В°C TYPICAL VALUE Drain-to-Source Voltage 60 V Qg Gate Charge Total (10 V) 14 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage 2.3 nC VGS = 6 V
VGS = 10 V 13 mΩ 10 mΩ 3 V Ordering Information(1) 2 Applications UNIT VDS High-Side Synchronous Buck Converter
Motor Control Device Qty Media Package Ship CSD18537NQ5A 2500 13-Inch Reel CSD18537NQ5AT 250 7-Inch Reel SON 5 x 6 mm
Plastic Package Tape and
Reel 3 Description (1) For all available packages, see the orderable addendum at
the end of the data sheet. This 10 mО©, 60 V, SON 5 mm x 6 mm NexFETв„ў
power MOSFET is designed to minimize losses in
power conversion applications. TA = 25В°C Top View
S 8 1 Absolute Maximum Ratings
VALUE UNIT VDS Drain-to-Source Voltage 60 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package limited) 50 Continuous Drain Current (Silicon limited), …