Datasheet Texas Instruments LPC660IM/NOPB — 数据表
制造商 | Texas Instruments |
系列 | LPC660 |
零件号 | LPC660IM/NOPB |
低功耗CMOS四路运算放大器14-SOIC -40至85
数据表
LPC660 Low Power CMOS Quad Operational Amplifier datasheet
PDF, 1.3 Mb, 修订版: D, 档案已发布: Mar 19, 2013
从文件中提取
价格
状态
Lifecycle Status | Active (Recommended for new designs) |
Manufacture's Sample Availability | No |
打包
Pin | 14 |
Package Type | D |
Industry STD Term | SOIC |
JEDEC Code | R-PDSO-G |
Package QTY | 55 |
Carrier | TUBE |
Device Marking | LPC660IM |
Width (mm) | 3.91 |
Length (mm) | 8.65 |
Thickness (mm) | 1.58 |
Pitch (mm) | 1.27 |
Max Height (mm) | 1.75 |
Mechanical Data | 下载 |
参数化
Additional Features | N/A |
Architecture | CMOS |
CMRR(Min) | 63 dB |
CMRR(Typ) | 83 dB |
GBW(Typ) | 0.35 MHz |
Input Bias Current(Max) | 20 pA |
Iq per channel(Max) | 0.05 mA |
Iq per channel(Typ) | 0.04 mA |
Number of Channels | 4 |
Offset Drift(Typ) | 1.3 uV/C |
Operating Temperature Range | -40 to 85 C |
Output Current(Typ) | 21 mA |
Package Group | SOIC |
Package Size: mm2:W x L | 14SOIC: 52 mm2: 6 x 8.65(SOIC) PKG |
Rail-to-Rail | In to V-,Out |
Rating | Catalog |
Slew Rate(Typ) | 0.11 V/us |
Total Supply Voltage(Max) | 15 +5V=5, +/-5V=10 |
Total Supply Voltage(Min) | 5 +5V=5, +/-5V=10 |
Vn at 1kHz(Typ) | 42 nV/rtHz |
Vos (Offset Voltage @ 25C)(Max) | 3 mV |
生态计划
RoHS | Compliant |
应用须知
- AN-856 A SPICE Comp Macromodel for CMOS Op Amplifiers (Rev. C)PDF, 203 Kb, 修订版: C, 档案已发布: May 6, 2013
A SPICE macromodel that captures the “personality” of Texas Instruments CMOS op-amps has beendeveloped. The salient features of the macromodel are a MOSFET input stage, Miller compensation, anda current-source output stage. A description of the model is provided along with correlation to actualdevice behavior.
模型线
系列: LPC660 (5)
- LPC660AIM/NOPB LPC660AIMX/NOPB LPC660IM/NOPB LPC660IMX LPC660IMX/NOPB
制造商分类
- Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > Precision Op Amps