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Documents CSD23202W10
SLPS506 – AUGUST 2014 CSD23202W10 12-V P-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Qg and Qgd
Small Footprint 1 mm Г— 1 mm
Low Profile 0.62-mm Height
Pb Free
Gate ESD Protection – 3 kV
RoHS Compliant
Halogen Free TA = 25°C –12 V Qg Gate Charge Total (–4.5 V) 2.9 nC Qgd Gate Charge Gate-to-Drain Drain-to-Source OnResistance VGS(th) Battery Management
Load Switch
Battery Protection VGS = –1.8 V 67 mΩ VGS = –2.5 V 54 mΩ VGS = –4.5 V 44 mΩ Threshold Voltage –0.60 V Device Qty Media Package Ship CSD23202W10 3000 7-Inch Reel CSD23202W10T 250 7-Inch Reel 1 × 1-mm Wafer
Level Package Tape and
Reel Absolute Maximum Ratings Top View VALUE UNIT VDS Drain-to-Source Voltage –12 V VGS Gate-to-Source Voltage –6 V ID Continuous Drain Current(1) –2.2 A IDM Pulsed Drain Current(2) –25 A Continuous Gate Clamp Current –0.5 A IG D S Pulsed Gate Clamp Current –7 A PD Power Dissipation(1) 1 W TJ,
Tstg Operating Junction and
Storage Temperature Range –55 to 150 °C (1) Device operating at a temperature of 105°C
(2) Typ RθJA = 195°C/W, Pulse width ≤100 μs, duty cycle ≤1% P0097-01 . . . .
RDS(on) vs VGS Gate Charge 150 4.5
TC = 25В°C, I D = -0.5 A …
