Datasheet Texas Instruments UC1709L — 数据表

制造商Texas Instruments
系列UC1709
零件号UC1709L
Datasheet Texas Instruments UC1709L

反相高速MOSFET驱动器20-LCCC -55至125

数据表

UC3709 Dual High-Speed FET Driver datasheet
PDF, 548 Kb, 修订版: C, 档案已发布: Feb 27, 2008
从文件中提取

价格

状态

Lifecycle StatusActive (Recommended for new designs)
Manufacture's Sample AvailabilityNo

打包

Pin20
Package TypeFK
Industry STD TermLCCC
JEDEC CodeS-CQCC-N
Package QTY1
CarrierTUBE
Device MarkingUC1709L
Width (mm)8.89
Length (mm)8.89
Thickness (mm)1.83
Pitch (mm)1.27
Max Height (mm)2.03
Mechanical Data下载

参数化

Fall Time40 ns
Input ThresholdTTL
Input VCC(Max)40 V
Input VCC(Min)5 V
Number of Channels2
Operating Temperature Range-55 to 125 C
Package GroupLCCC
Peak Output Current1.5 A
Power SwitchMOSFET
Prop Delay25 ns
RatingMilitary
Rise Time40 ns
Special FeaturesThermal Shutdown

生态计划

RoHSSee ti.com

应用须知

  • U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching Characteristics
    PDF, 573 Kb, 档案已发布: Sep 5, 1999
    The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola
  • U-137 Practical Considerations in High Performance MOSFET IGBT and MCT Gate
    PDF, 244 Kb, 档案已发布: Sep 5, 1999
    The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad

模型线

系列: UC1709 (4)

制造商分类

  • Semiconductors > Space & High Reliability > Power Management Products > MOSFET and IGBT Gate Driver