Datasheet Texas Instruments TS3DDR4000ZBAR — 数据表

12位1：2高速DDR2 / DDR3 / DDR4开关/多路复用器48-NFBGA -40至85

数据表

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Lifecycle Status	Active (Recommended for new designs)
Manufacture's Sample Availability	Yes

Additional Features	Powered off protection
Bandwidth	6000 MHz
Bandwidth(Max)	6000 MHz
Configuration	2:1 SPDT
Crosstalk	-68 dB
ESD Charged Device Model	1 kV
ESD HBM(Typ)	3 kV
ICC(Max)	48 uA
ICC(Typ)	40 uA
Input/Ouput Voltage(Max)	3.3 V
Input/Output OFF-state Capacitance(Typ)	1 pF
Input/Output ON-state Capacitance(Typ)	0.5 pF
Number of Channels	12
OFF-state leakage current(Max)	5 µA
Operating Temperature Range	-40 to 85 C
Package Group	NFBGA
Package Size: mm2:W x L	48NFBGA: 24 mm2: 3 x 8(NFBGA) PKG
Propagation Delay	85 ns
Protocols	DDR3,DDR4
RON Flatness(Typ)	0.6 Ohms
Ron Channel Match(Max)	1 в„¦
Ron(Max)	11.2 Ohms
Ron(Typ)	8.3 Ohms
Turn off Time (Disable)(Max)	65 ns
Turn on Time (Enable)(Max)	65 ns
VCC(Max)	3.6 V
VCC(Min)	2.375 V
VIH(Min)	1.4 V
VIL(Max)	0.5 V

RoHS

Compliant

Evaluation Modules & Boards: TS3DDR4000-EVM
TS3DDR4000 Evaluation Module
Lifecycle Status: Active (Recommended for new designs)
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Preventing Excess Power Consumption on Analog Switches
PDF, 238 Kb, 档案已发布: Jul 3, 2008
Analog switches are extensively used for switching audio signals in battery-powered applications, such as mobile phones. In any cases, the switch is powered directly from the battery, but it receives control signals from a lower voltage processor GPIO. For most analog switches, this application condition leads to an excess supply current draw that catches system designers by surprise. This applica

系列: TS3DDR4000 (1)