Datasheet Texas Instruments CSD17483F4T — 数据表

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SLPS447D – JULY 2013 – REVISED DECEMBER 2016 CSD17483F4 30-V N-Channel FemtoFET™ MOSFET
1 Features 1 Product Summary Low On Resistance
Low Qg and Qgd
Low-Threshold Voltage
Ultra-Small Footprint (0402 Case Size)
– 1.0 mm × 0.6 mm
Ultra-Low Profile
– 0.35-mm Height
Integrated ESD Protection Diode
– Rated > 4-kV HBM
– Rated > 2-kV CDM
Lead and Halogen Free
RoHS Compliant TA = 25В°C Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on)
VGS(th) Drain-to-Source
On Resistance UNIT 30 V 1010 pC 130 pC VGS = 1.8 V 370 VGS = 2.5 V 240 VGS = 4.5 V 200 Threshold Voltage 0.85 mΩ V Device Information(1)
DEVICE QTY CSD17483F4 3000 CSD17483F4T 250 MEDIA PACKAGE SHIP 7-Inch Reel Femto(0402)
1.00 mm Г— 0.60 mm …