CSD17501Q5A
www.ti.com SLPS303B – DECEMBER 2010 – REVISED SEPTEMBER 2012 30V, N-Channel NexFET™ Power MOSFETs
Check for Samples: CSD17501Q5A PRODUCT SUMMARY FEATURES 1 2 TA = 25В°C unless otherwise stated Ultralow Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm Г— 6-mm Plastic Package VDS Drain to Source Voltage Qg Gate Charge Total (4.5V) Qgd Gate Charge Gate to Drain DESCRIPTION
The NexFETв„ў power MOSFET has been designed
to minimize losses in power conversion applications.
Top View Drain to Source On Resistance VGS(th) Threshold Voltage 8 D S 2 7 D S 3 6 D 5 4 nC
3 mΩ VGS = 10V 2.4 mΩ 1.3 V Package Media CSD17501Q5A SON 5-mm × 6-mm
Plastic Package 13-Inch
Reel Qty Ship 2500 Tape and
Reel Text Added For Spacing
ABSOLUTE MAXIMUM RATINGS
TA = 25В°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage В±20 V Continuous Drain Current, TC = 25В°C 100 A Continuous Drain Current(1) 28 A IDM Pulsed Drain Current, TA = 25В°C(2) 187 A PD Power Dissipation(1) 3.2 W TJ,
TSTG Operating Junction and Storage Temperature
Range –55 to 150 °C EAS Avalanche Energy, single pulse
ID = 90A, L = 0.1mH, RG = 25Ω 405 mJ (1) Typical RθJA = 39°C/W on a 1-inch2 (6.45-cm2), 2-oz. (0.071mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤300μs, duty cycle ≤2% D
G nC VGS = 4.5V Device ID 1 V 13.2 Text Added For Spacing …
