Datasheet Texas Instruments CSD17570Q5B — 数据表

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SLPS471D – FEBRUARY 2014 – REVISED MAY 2017 CSD17570Q5B 30 V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra-Low Resistance
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5 mm × 6 mm Plastic Package TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 30 V Qg Gate Charge Total (4.5 V) 93 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage 3 Description 8 1 7 2 G 4 0.56 mΩ 1.5 V Device Qty Media Package Ship 2500 13-Inch Reel CSD17570Q5BT 250 7-Inch Reel SON 5 × 6 mm
Plastic Package Tape and
Reel Absolute Maximum Ratings
VALUE UNIT VDS Drain-to-Source Voltage 30 V VGS Gate-to-Source Voltage В±20 V Continuous Drain Current (Package limited) 100 Continuous Drain Current (Silicon limited),
TC = 25°C 407 D ID 3 VGS = 10 V TA = 25°C Top Icon S mΩ (1) For all available packages, see the orderable addendum at
the end of the data sheet. This 30 V, 0.56 mО©, SON 5 Г— 6 mm NexFETв„ў power
MOSFET is designed to minimize resistance for
ORing and hot swap applications and is not intended
for switching applications. S nC
0.74 CSD17570Q5B ORing and Hot Swap Applications S 34 …