Datasheet Texas Instruments TLV522DGKR — 数据表
| 制造商 | Texas Instruments |
| 系列 | TLV522 |
| 零件号 | TLV522DGKR |
适用于成本敏感型系统的500nA纳瓦级双路RRIO CMOS输入运算放大器8-VSSOP -40至125
数据表
TLV522 Dual Nanopower, 500nA, RRIO CMOS Operational Amplifier datasheet
PDF, 1.0 Mb, 档案已发布: May 20, 2016
从文件中提取
价格
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No |
打包
| Pin | 8 | 8 |
| Package Type | DGK | DGK |
| Industry STD Term | VSSOP | VSSOP |
| JEDEC Code | R-PDSO-G | R-PDSO-G |
| Package QTY | 2500 | 2500 |
| Carrier | LARGE T&R | LARGE T&R |
| Device Marking | SL | V522 |
| Width (mm) | 3 | 3 |
| Length (mm) | 3 | 3 |
| Thickness (mm) | .97 | .97 |
| Pitch (mm) | .65 | .65 |
| Max Height (mm) | 1.07 | 1.07 |
| Mechanical Data | 下载 | 下载 |
参数化
| Additional Features | Cost Optimized,EMI Hardened |
| Architecture | CMOS |
| CMRR(Min) | 62 dB |
| CMRR(Typ) | 90 dB |
| GBW(Typ) | 0.008 MHz |
| Iq per channel(Max) | 0.0008 mA |
| Iq per channel(Typ) | 0.0005 mA |
| Number of Channels | 2 |
| Offset Drift(Typ) | 1.5 uV/C |
| Operating Temperature Range | -40 to 125 C |
| Output Current(Typ) | 5 mA |
| Package Group | VSSOP |
| Package Size: mm2:W x L | 8VSSOP: 15 mm2: 4.9 x 3(VSSOP) PKG |
| Rail-to-Rail | In,Out |
| Rating | Catalog |
| Slew Rate(Typ) | 0.0037 V/us |
| Total Supply Voltage(Max) | 5.5 +5V=5, +/-5V=10 |
| Total Supply Voltage(Min) | 1.7 +5V=5, +/-5V=10 |
| Vn at 1kHz(Typ) | 300 nV/rtHz |
| Vos (Offset Voltage @ 25C)(Max) | 4 mV |
生态计划
| RoHS | Compliant |
设计套件和评估模块
- Evaluation Modules & Boards: AMPQUICKKIT-EVM
TI Precision Amplifier Quickstart Kit
Lifecycle Status: Active (Recommended for new designs)
模型线
系列: TLV522 (2)
- TLV522DGKR TLV522DGKT
制造商分类
- Semiconductors > Amplifiers > Operational Amplifiers (Op Amps) > Ultra-Low-Power Op Amps (<=10uA)