Datasheet Texas Instruments LM5110-3SD — 数据表
制造商 | Texas Instruments |
系列 | LM5110 |
零件号 | LM5110-3SD |
具有负输出电压功能的双路5A复合栅极驱动器10-WSON -40至125
数据表
LM5110 Dual 5-A Compound Gate Driver With Negative Output Voltage Capability datasheet
PDF, 1.0 Mb, 修订版: B, 档案已发布: Nov 5, 2012
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价格
状态
Lifecycle Status | NRND (Not recommended for new designs) |
Manufacture's Sample Availability | No |
打包
Pin | 10 |
Package Type | DPR |
Industry STD Term | WSON |
JEDEC Code | S-PDSO-N |
Package QTY | 1000 |
Carrier | LARGE T&R |
Device Marking | 5110-3 |
Width (mm) | 4 |
Length (mm) | 4 |
Thickness (mm) | .75 |
Pitch (mm) | .8 |
Max Height (mm) | .8 |
Mechanical Data | 下载 |
替代品
Replacement | LM5110-3SD/NOPB |
Replacement Code | S |
参数化
Channel Input Logic | Inverting,Non-Inverting,Combination |
Fall Time | 12 ns |
Input Threshold | TTL |
Input VCC(Max) | 14 V |
Input VCC(Min) | 3.5 V |
Number of Channels | 2 |
Operating Temperature Range | -40 to 125 C |
Package Group | WSON |
Peak Output Current | 5 A |
Power Switch | MOSFET |
Prop Delay | 25 ns |
Rating | Catalog |
Rise Time | 14 ns |
Special Features | Negative Output Voltgae Capability |
生态计划
RoHS | See ti.com |
模型线
系列: LM5110 (13)
制造商分类
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver
其他名称:
LM51103SD, LM5110 3SD