Datasheet NXP PMEG10010ELR — 数据表

SO
D 123
W PMEG10010ELR 100 V, 1 A low leakage current Schottky barrier rectifier
8 September 2016 Product data sheet 1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead
Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Average forward current: IF(AV) ≤ 1 A
Reverse voltage: VR ≤ 100 V
Low forward voltage: VF = 710 mV
High power capability due to clip-bonding technology
Extremely low leakage current IR = 40 nA
High temperature Tj ≤ 175 °C
AEC-Q101 qualified 3. Applications Low voltage rectification
High efficiency DC-to-DC conversion
Switch mode power supply
Reverse polarity protection
Low power consumption applications 4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit IF(AV) average forward
current square wave; Оґ = 0.5 ; f = 20 kHz;
Tsp ≤ 170 °C -1 A VR reverse voltage Tj = 25 °C -100 V VF forward voltage IF = 1 A; tp ≤ 300 µs; δ ≤ 0.02 ;
Tj = 25 °C -710 770 mV IR reverse current VR = 100 V; tp ≤ 300 µs; Tj = 25 °C; δ ≤
0.02 -40 150 nA PMEG10010ELR NXP Semiconductors 100 V, 1 A low leakage current Schottky barrier rectifier 5. Pinning information …