Datasheet Texas Instruments 74ACT11139 — 数据表

制造商	Texas Instruments
系列	74ACT11139

数据表

价格

状态

打包

参数化

Parameters / Models	74ACT11139D	74ACT11139DR	74ACT11139DRE4	74ACT11139DRG4	74ACT11139N	74ACT11139PWLE	74ACT11139PWR
Approx. Price (US$)		1.00 | 1ku	1.00 | 1ku	1.00 | 1ku	1.00 | 1ku	1.00 | 1ku
Bandwidth, MHz	100						100
Bits	4						4
Bits(#)		4	4	4	4	4
Number of Channels	2						2
Channels(#)		2	2	2	2	2
Configuration	2:4	2:4	2:4	2:4	2:4	2:4	2:4
Digital input leakage(Max), uA	5						5
ESD Charged Device Model, kV	0.75						0.75
ESD HBM, kV	2						2
F @ Nom Voltage(Max), Mhz	90						90
F @ Nom Voltage(Max)(Mhz)		90	90	90	90	90
Function	Decoder/Demultiplexer	Decoder/Demultiplexer	Decoder/Demultiplexer	Decoder/Demultiplexer	Decoder/Demultiplexer	Decoder/Demultiplexer	Decoder/Demultiplexer
ICC @ Nom Voltage(Max), mA	0.08						0.08
ICC @ Nom Voltage(Max)(mA)		0.08	0.08	0.08	0.08	0.08
Input Type		TTL	TTL	TTL	TTL	TTL
Operating Temperature Range, C	-40 to 85						-40 to 85
Operating Temperature Range(C)		-40 to 85	-40 to 85	-40 to 85	-40 to 85	-40 to 85
Output Drive (IOL/IOH)(Max), mA	24/-24						24/-24
Output Drive (IOL/IOH)(Max)(mA)		24/-24	24/-24	24/-24	24/-24	24/-24
Output Type		CMOS	CMOS	CMOS	CMOS	CMOS
Package Group	SOIC	SOIC	SOIC	SOIC	SOIC TSSOP	TSSOP	TSSOP
Package Size: mm2:W x L, PKG	16SOIC: 59 mm2: 6 x 9.9(SOIC)						16TSSOP: 32 mm2: 6.4 x 5(TSSOP)
Package Size: mm2:W x L (PKG)		See datasheet (PDIP)	See datasheet (PDIP)	See datasheet (PDIP)	See datasheet (PDIP)	See datasheet (PDIP)
Rating	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog
Schmitt Trigger	No	No	No	No	No	No	No
Technology Family	ACT	ACT	ACT	ACT	ACT	ACT	ACT
Type	Standard	Standard	Standard	Standard	Standard	Standard	Standard
VCC(Max), V	5.5						5.5
VCC(Max)(V)		5.5	5.5	5.5	5.5	5.5
VCC(Min), V	4.5						4.5
VCC(Min)(V)		4.5	4.5	4.5	4.5	4.5
Voltage(Nom), V	5						5
Voltage(Nom)(V)		5	5	5	5	5
tpd @ Nom Voltage(Max), ns	7.8						7.8
tpd @ Nom Voltage(Max)(ns)		7.8	7.8	7.8	7.8	7.8

生态计划

应用须知

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  CMOS Power Consumption and CPD Calculation (Rev. B)
  PDF, 89 Kb, 修订版: B, 档案已发布: Jun 1, 1997
  Reduction of power consumption makes a device more reliable. The need for devices that consume a minimum amount of power was a major driving force behind the development of CMOS technologies. As a result CMOS devices are best known for low power consumption. However for minimizing the power requirements of a board or a system simply knowing that CMOS devices may use less power than equivale
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  PDF, 260 Kb, 修订版: D, 档案已发布: Jun 23, 2016
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  Designing With Logic (Rev. C)
  PDF, 186 Kb, 修订版: C, 档案已发布: Jun 1, 1997
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  Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc
  PDF, 43 Kb, 档案已发布: Apr 1, 1996
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  Semiconductor Packing Material Electrostatic Discharge (ESD) Protection
  PDF, 337 Kb, 档案已发布: Jul 8, 2004
  Forty-eight-pin TSSOP components that were packaged using Texas Instruments (TI) standard packing methodology were subjected to electrical discharges between 0.5 and 20 kV as generated by an IEC ESD simulator to determine the level of ISD protection provided by the packing materials. The testing included trays tape and reel and magazines. Additional units were subjected to the same discharge

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• Semiconductors> Switches and Multiplexers> Buffered Encoders and Decoders