Datasheet Texas Instruments CD54HCT193 — 数据表
制造商 | Texas Instruments |
系列 | CD54HCT193 |
高速CMOS逻辑可预置同步4位二进制向上/向下计数器
数据表
价格
状态
5962-9084801MEA | 9084801MEAS2035 | CD54HCT193F3A | |
---|---|---|---|
Lifecycle Status | Active (Recommended for new designs) | Obsolete (Manufacturer has discontinued the production of the device) | Active (Recommended for new designs) |
Manufacture's Sample Availability | No | No | No |
打包
5962-9084801MEA | 9084801MEAS2035 | CD54HCT193F3A | |
---|---|---|---|
N | 1 | 2 | 3 |
Pin | 16 | 16 | 16 |
Package Type | J | J | J |
Industry STD Term | CDIP | CDIP | CDIP |
JEDEC Code | R-GDIP-T | R-GDIP-T | R-GDIP-T |
Package QTY | 1 | 1 | |
Carrier | TUBE | TUBE | |
Width (mm) | 6.92 | 6.92 | 6.92 |
Length (mm) | 19.56 | 19.56 | 19.56 |
Thickness (mm) | 4.57 | 4.57 | 4.57 |
Pitch (mm) | 2.54 | 2.54 | 2.54 |
Max Height (mm) | 5.08 | 5.08 | 5.08 |
Mechanical Data | 下载 | 下载 | 下载 |
Device Marking | A |
参数化
Parameters / Models | 5962-9084801MEA | 9084801MEAS2035 | CD54HCT193F3A |
---|---|---|---|
Bits | 4 | 4 | |
Bits(#) | 4 | ||
F @ Nom Voltage(Max), Mhz | 25 | 25 | |
F @ Nom Voltage(Max)(Mhz) | 25 | ||
Function | Counter | Counter | Counter |
ICC @ Nom Voltage(Max), mA | 0.08 | 0.08 | |
ICC @ Nom Voltage(Max)(mA) | 0.08 | ||
Operating Temperature Range, C | -55 to 125 | -55 to 125 | |
Operating Temperature Range(C) | -55 to 125 | ||
Output Drive (IOL/IOH)(Max), mA | 4/-4 | 4/-4 | |
Output Drive (IOL/IOH)(Max)(mA) | 4/-4 | ||
Package Group | CDIP | CDIP | CDIP |
Package Size: mm2:W x L, PKG | See datasheet (CDIP) | See datasheet (CDIP) | |
Package Size: mm2:W x L (PKG) | See datasheet (CDIP) | ||
Rating | Military | Military | Military |
Schmitt Trigger | No | No | |
Technology Family | HCT | HCT | HCT |
Type | Binary | Binary | Binary |
VCC(Max), V | 5.5 | 5.5 | |
VCC(Max)(V) | 5.5 | ||
VCC(Min), V | 4.5 | 4.5 | |
VCC(Min)(V) | 4.5 | ||
Voltage(Nom), V | 5 | 5 | |
tpd @ Nom Voltage(Max), ns | 50 | 50 | |
tpd @ Nom Voltage(Max)(ns) | 50 |
生态计划
5962-9084801MEA | 9084801MEAS2035 | CD54HCT193F3A | |
---|---|---|---|
RoHS | See ti.com | Not Compliant | See ti.com |
Pb Free | No |
应用须知
- Using High Speed CMOS and Advanced CMOS in Systems With Multiple VccPDF, 43 Kb, 档案已发布: Apr 1, 1996
Though low power consumption is a feature of CMOS devices sometimes this feature does not meet a designer?s system power supply constraints. Therefore a partial system power down or multiple Vcc supplies are used to meet the needs of the system. This document shows electrostatic discharge protection circuits. It also provides circuit and bus driver examples of partial system power down and curren - SN54/74HCT CMOS Logic Family Applications and RestrictionsPDF, 102 Kb, 档案已发布: May 1, 1996
The TI SN54/74HCT family of CMOS devices is a subgroup of the SN74HC series with the HCT circuitry modified to meet the interfacing requirements of TTL outputs to high-speed CMOS inputs. The HCT devices can be driven by the TTL circuits directly without additional components. This document describes the TTL/HC interface the operating voltages circuit noise and power consumption. A Bergeron anal - TI IBIS File Creation Validation and Distribution ProcessesPDF, 380 Kb, 档案已发布: Aug 29, 2002
The Input/Output Buffer Information Specification (IBIS) also known as ANSI/EIA-656 has become widely accepted among electronic design automation (EDA) vendors semiconductor vendors and system designers as the format for digital electrical interface data. Because IBIS models do not reveal proprietary internal processes or architectural information semiconductor vendors? support for IBIS con - Understanding and Interpreting Standard-Logic Data Sheets (Rev. C)PDF, 614 Kb, 修订版: C, 档案已发布: Dec 2, 2015
- Semiconductor Packing Material Electrostatic Discharge (ESD) ProtectionPDF, 337 Kb, 档案已发布: Jul 8, 2004
Forty-eight-pin TSSOP components that were packaged using Texas Instruments (TI) standard packing methodology were subjected to electrical discharges between 0.5 and 20 kV as generated by an IEC ESD simulator to determine the level of ISD protection provided by the packing materials. The testing included trays tape and reel and magazines. Additional units were subjected to the same discharge - Designing With Logic (Rev. C)PDF, 186 Kb, 修订版: C, 档案已发布: Jun 1, 1997
Data sheets which usually give information on device behavior only under recommended operating conditions may only partially answer engineering questions that arise during the development of systems using logic devices. However information is frequently needed regarding the behavior of the device outside the conditions in the data sheet. Such questions might be:?How does a bus driver behave w - Introduction to LogicPDF, 93 Kb, 档案已发布: Apr 30, 2015
- Implications of Slow or Floating CMOS Inputs (Rev. D)PDF, 260 Kb, 修订版: D, 档案已发布: Jun 23, 2016
- CMOS Power Consumption and CPD Calculation (Rev. B)PDF, 89 Kb, 修订版: B, 档案已发布: Jun 1, 1997
Reduction of power consumption makes a device more reliable. The need for devices that consume a minimum amount of power was a major driving force behind the development of CMOS technologies. As a result CMOS devices are best known for low power consumption. However for minimizing the power requirements of a board or a system simply knowing that CMOS devices may use less power than equivale
模型线
系列: CD54HCT193 (3)
制造商分类
- Semiconductors> Space & High Reliability> Logic Products> Specialty Logic Products> Counter/Arithmetic/Parity Function Products