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Documents CSD13302W
SLPS535 – MARCH 2015 CSD13302W 12 V N Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Ultra Low On Resistance
Low Qg and Qgd
Small Footprint 1 mm Г— 1 mm
Low Profile 0.62 mm Height
Pb Free
RoHS Compliant
Halogen Free TA = 25В°C TYPICAL VALUE Drain-to-Source Voltage 12 V Qg Gate Charge Total (4.5 V) 6.0 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source
On-Resistance VGS(th) Threshold Voltage 2.1 nC VGS = 2.5 V 21.2 mΩ VGS = 4.5 V 14.6 mΩ 1.0 V Ordering Information(1) 2 Applications UNIT VDS Battery Management
Load Switch
Battery Protection Device Qty Media Package Ship CSD13302W 3000 7-Inch Reel CSD13302WT 250 7-Inch Reel 1.0 mm Г— 1.0 mm
Wafer Level
Package Tape and
Reel (1) For all available packages, see the orderable addendum at
the end of the data sheet. 3 Description
This 14.6 mО©, 12 V, N-Channel device is designed to
deliver the lowest on resistance and gate charge in a …
