Datasheet Texas Instruments CSD17556Q5B — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD17556Q5B |
30V N沟道NexFET功率MOSFET
数据表
CSD17556Q5B 30-V N-Channel NexFET Power MOSFET datasheet
PDF, 871 Kb, 修订版: C, 档案已发布: Jan 17, 2017
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价格
状态
| CSD17556Q5B | CSD17556Q5BT | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes | No |
打包
| CSD17556Q5B | CSD17556Q5BT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | DNK | DNK |
| Package QTY | 2500 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | CSD17556 | CSD17556 |
| Width (mm) | 6 | 6 |
| Length (mm) | 5 | 5 |
| Thickness (mm) | .95 | .95 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | CSD17556Q5B | CSD17556Q5BT |
|---|---|---|
| Configuration | Single | Single |
| ID, Silicon limited at Tc=25degC, A | 215 | 215 |
| IDM, Max Pulsed Drain Current(Max), A | 400 | 400 |
| Package, mm | SON5x6 | SON5x6 |
| QG Typ, nC | 28.5 | 28.5 |
| QGD Typ, nC | 6.9 | 6.9 |
| RDS(on) Typ at VGS=4.5V, mOhm | 1.5 | 1.5 |
| Rds(on) Max at VGS=10V, mOhms | 1.4 | 1.4 |
| Rds(on) Max at VGS=4.5V, mOhms | 1.8 | 1.8 |
| VDS, V | 30 | 30 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 1.4 | 1.4 |
生态计划
| CSD17556Q5B | CSD17556Q5BT | |
|---|---|---|
| RoHS | Compliant | Compliant |
| Pb Free | Yes | Yes |
应用须知
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
模型线
系列: CSD17556Q5B (2)
制造商分类
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor