Datasheet Texas Instruments CSD17559Q5 — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD17559Q5 |
30V N沟道NexFET™功率MOSFET
数据表
CSD17559Q5 30-V N-Channel NexFET Power MOSFET datasheet
PDF, 409 Kb, 修订版: A, 档案已发布: Sep 9, 2014
从文件中提取
价格
状态
| CSD17559Q5 | CSD17559Q5T | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | No | Yes |
打包
| CSD17559Q5 | CSD17559Q5T | |
|---|---|---|
| N | 1 | 2 |
| Pin | 8 | 8 |
| Package Type | DQH | DQH |
| Industry STD Term | VSON-CLIP | VSON-CLIP |
| JEDEC Code | R-PSSO-N | R-PSSO-N |
| Package QTY | 2500 | 250 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | CSD17559 | CSD17559 |
| Width (mm) | 6 | 6 |
| Length (mm) | 5 | 5 |
| Thickness (mm) | 1 | 1 |
| Pitch (mm) | 1.27 | 1.27 |
| Max Height (mm) | 1.05 | 1.05 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | CSD17559Q5 | CSD17559Q5T |
|---|---|---|
| Configuration | Single | Single |
| ID, Silicon limited at Tc=25degC, A | 257 | 257 |
| IDM, Max Pulsed Drain Current(Max), A | 400 | 400 |
| Package, mm | SON5x6 | SON5x6 |
| QG Typ, nC | 39 | 39 |
| QGD Typ, nC | 9.3 | 9.3 |
| RDS(on) Typ at VGS=4.5V, mOhm | 1.15 | 1.15 |
| Rds(on) Max at VGS=10V, mOhms | 1.15 | 1.15 |
| Rds(on) Max at VGS=4.5V, mOhms | 1.5 | 1.5 |
| VDS, V | 30 | 30 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 1.4 | 1.4 |
生态计划
| CSD17559Q5 | CSD17559Q5T | |
|---|---|---|
| RoHS | Compliant | Compliant |
| Pb Free | Yes | Yes |
应用须知
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
模型线
系列: CSD17559Q5 (2)
制造商分类
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor