Datasheet Texas Instruments CSD18504Q5A — 数据表
制造商 | Texas Instruments |
系列 | CSD18504Q5A |
40V,N沟道NexFET™功率MOSFET
数据表
CSD18504Q5A 40-V N-Channel NexFET Power MOSFET datasheet
PDF, 410 Kb, 修订版: E, 档案已发布: Sep 9, 2014
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价格
状态
CSD18504Q5A | CSD18504Q5AT | |
---|---|---|
Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes | No |
打包
CSD18504Q5A | CSD18504Q5AT | |
---|---|---|
N | 1 | 2 |
Pin | 8 | 8 |
Package Type | DQJ | DQJ |
Package QTY | 2500 | 250 |
Carrier | LARGE T&R | SMALL T&R |
Device Marking | CSD18504 | CSD18504 |
Width (mm) | 6 | 6 |
Length (mm) | 4.9 | 4.9 |
Thickness (mm) | 1 | 1 |
Mechanical Data | 下载 | 下载 |
参数化
Parameters / Models | CSD18504Q5A | CSD18504Q5AT |
---|---|---|
Configuration | Single | Single |
ID, Silicon limited at Tc=25degC, A | 75 | 75 |
IDM, Max Pulsed Drain Current(Max), A | 275 | 275 |
Package, mm | SON5x6 | SON5x6 |
QG Typ, nC | 16 | 16 |
QGD Typ, nC | 2.4 | 2.4 |
RDS(on) Typ at VGS=4.5V, mOhm | 7.5 | 7.5 |
Rds(on) Max at VGS=10V, mOhms | 6.6 | 6.6 |
Rds(on) Max at VGS=4.5V, mOhms | 9.8 | 9.8 |
VDS, V | 40 | 40 |
VGS, V | 20 | 20 |
VGSTH Typ, V | 1.8 | 1.8 |
生态计划
CSD18504Q5A | CSD18504Q5AT | |
---|---|---|
RoHS | Compliant | Compliant |
Pb Free | Yes | Yes |
应用须知
- Ceramic or electrolytic output capacitors in DC/DC converters—Why not both?PDF, 2.1 Mb, 档案已发布: Jul 24, 2015
- Analog Applications Journal 3Q 2015PDF, 7.1 Mb, 档案已发布: Jul 24, 2015
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
模型线
系列: CSD18504Q5A (2)
制造商分类
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor