Datasheet Texas Instruments CSD18510KTT — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD18510KTT |
40V N沟道NexFET™功率MOSFET
数据表
CSD18510KTT 40-V N-Channel NexFET Power MOSFET datasheet
PDF, 366 Kb, 修订版: A, 档案已发布: Jan 6, 2017
从文件中提取
价格
状态
| CSD18510KTT | CSD18510KTTT | |
|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes | No |
打包
| CSD18510KTT | CSD18510KTTT | |
|---|---|---|
| N | 1 | 2 |
| Pin | 3 | 3 |
| Package Type | KTT | KTT |
| Industry STD Term | TO-263 | TO-263 |
| JEDEC Code | R-PSFM-G | R-PSFM-G |
| Package QTY | 500 | 50 |
| Carrier | LARGE T&R | SMALL T&R |
| Device Marking | CSD18510KTT | CSD18510KTT |
| Width (mm) | 8.41 | 8.41 |
| Length (mm) | 10.18 | 10.18 |
| Thickness (mm) | 4.44 | 4.44 |
| Pitch (mm) | 2.54 | 2.54 |
| Max Height (mm) | 4.83 | 4.83 |
| Mechanical Data | 下载 | 下载 |
参数化
| Parameters / Models | CSD18510KTT | CSD18510KTTT |
|---|---|---|
| Configuration | Single | Single |
| ID, Silicon limited at Tc=25degC, A | 274 | 274 |
| IDM, Max Pulsed Drain Current(Max), A | 400 | 400 |
| Package, mm | D2PAK | D2PAK |
| QG Typ, nC | 119 | 119 |
| QGD Typ, nC | 21 | 21 |
| RDS(on) Typ at VGS=4.5V, mOhm | 2.0 | 2.0 |
| Rds(on) Max at VGS=10V, mOhms | 1.7 | 1.7 |
| Rds(on) Max at VGS=4.5V, mOhms | 2.6 | 2.6 |
| VDS, V | 40 | 40 |
| VGS, V | 20 | 20 |
| VGSTH Typ, V | 1.7 | 1.7 |
生态计划
| CSD18510KTT | CSD18510KTTT | |
|---|---|---|
| RoHS | Compliant | Compliant |
| Pb Free | Yes | Yes |
模型线
系列: CSD18510KTT (2)
制造商分类
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor