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Design CSD18512Q5B
SLPS624 – DECEMBER 2016 CSD18512Q5B 40 V N-Channel NexFET™ Power MOSFET
1 Features 1 Product Summary Low RDS(ON)
Low Thermal Resistance
Avalanche Rated
Logic Level
Pb-Free Terminal Plating
RoHS Compliant
Halogen-Free
SON 5 mm × 6 mm Plastic Package TA = 25°C 40 V Qg Gate charge total (10 V) 75 nC Qgd Gate charge gate to drain RDS(on) Drain to source on resistance VGS(th) Threshold voltage VGS = 10 V 1.3 mΩ
V QTY MEDIA CSD18512Q5B 2500 13-Inch Reel CSD18512Q5BT 250 7-Inch Reel PACKAGE SHIP SON 5 mm Г— 6 mm Tape and
Plastic Package
Reel Absolute Maximum Ratings Top View TA = 25В°C VALUE UNIT VDS Drain to source voltage 40 V VGS Gate to source voltage В±20 V Continuous drain current (package limited) 100 Continuous drain current (silicon limited),
TC = 25В°C 211 ID
8 1 D IDM
7 2 D PD
6 3 5 4 Continuous drain current(1) 32 Pulsed drain current(2) 400 Power dissipation(1) 3.1 Power dissipation, TC = 25В°C 139 D TJ, …
