Datasheet Texas Instruments CSD18563Q5A — 数据表
| 制造商 | Texas Instruments |
| 系列 | CSD18563Q5A |
60V N沟道NexFET功率MOSFET
数据表
CSD18563Q5A 60 V N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 817 Kb, 修订版: C, 档案已发布: Jan 19, 2016
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价格
状态
| CSD18563Q5A | CSD18563Q5A-P | CSD18563Q5AT | |
|---|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Preview (Device has been announced but is not in production. Samples may or may not be available) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes | No | No |
打包
| CSD18563Q5A | CSD18563Q5A-P | CSD18563Q5AT | |
|---|---|---|---|
| N | 1 | 2 | 3 |
| Pin | 8 | 8 | 8 |
| Package Type | DQJ | DQJ | DQJ |
| Package QTY | 2500 | 2500 | 250 |
| Carrier | LARGE T&R | LARGE T&R | SMALL T&R |
| Device Marking | CSD18563 | CSD18563 | CSD18563 |
| Width (mm) | 6 | 6 | 6 |
| Length (mm) | 4.9 | 4.9 | 4.9 |
| Thickness (mm) | 1 | 1 | 1 |
| Mechanical Data | 下载 | 下载 | 下载 |
参数化
| Parameters / Models | CSD18563Q5A | CSD18563Q5A-P | CSD18563Q5AT |
|---|---|---|---|
| Configuration | Single | Single | Single |
| ID, Silicon limited at Tc=25degC, A | 93 | 93 | 93 |
| IDM, Max Pulsed Drain Current(Max), A | 251 | 251 | 251 |
| Package, mm | SON5x6 | SON5x6 | SON5x6 |
| QG Typ, nC | 15 | 15 | 15 |
| QGD Typ, nC | 2.9 | 2.9 | 2.9 |
| RDS(on) Typ at VGS=4.5V, mOhm | 8.6 | 8.6 | 8.6 |
| Rds(on) Max at VGS=10V, mOhms | 6.8 | 6.8 | 6.8 |
| Rds(on) Max at VGS=4.5V, mOhms | 10.8 | 10.8 | 10.8 |
| VDS, V | 60 | 60 | 60 |
| VGS, V | 20 | 20 | 20 |
| VGSTH Typ, V | 2 | 2 | 2 |
生态计划
| CSD18563Q5A | CSD18563Q5A-P | CSD18563Q5AT | |
|---|---|---|---|
| RoHS | Compliant | Compliant | Compliant |
| Pb Free | Yes | Yes | Yes |
应用须知
- Ringing Reduction Techniques for NexFET High Performance MOSFETsPDF, 1.4 Mb, 档案已发布: Nov 16, 2011
模型线
系列: CSD18563Q5A (3)
制造商分类
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor