Datasheet Texas Instruments CSD23382F4 — 数据表

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SLPS453C – MAY 2014 – REVISED OCTOBER 2014 CSD23382F4 12 V P-Channel FemtoFET™ MOSFET
1 Features 1 Product Summary Low On-Resistance
Ultra-Low Qg and Qgd
Ultra-Small Footprint (0402 Case Size)
– 1.0 mm × 0.6 mm
Low Profile
– 0.35 mm Max Height
Integrated ESD Protection Diode
– Rated >2 kV HBM
– Rated >2 kV CDM
Pb Terminal Plating
Halogen Free
RoHS Compliant TA = 25°C UNIT Drain-to-Source Voltage –12 V Qg Gate Charge Total (–4.5 V) 1.04 nC Qgd Gate Charge Gate-to-Drain RDS(on)
VGS(th) 0.15 Drain-to-Source On-Resistance nC VGS = –1.8 V 149 VGS = –2.5 V 90 VGS = –4.5 V 66 Threshold Voltage –0.8 mΩ V Ordering Information(1)
Device Qty Media Package Ship CSD23382F4 3000 7-Inch Reel CSD23382F4T 250 7-Inch Reel Femto (0402)
1.0 mm Г— 0.6 mm
Land Grid Array (LGA) Tape and …