Datasheet Texas Instruments CSD25483F4 — 数据表

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SLPS449D – OCTOBER 2013 – REVISED OCTOBER 2014 CSD25483F4 20 V P-Channel FemtoFET™ MOSFET
1 Features 1 Product Summary Ultra-Low On-Resistance
Ultra-Low Qg and Qgd
High Operating Drain Current
Ultra-Small Footprint (0402 Case Size)
– 1.0 mm × 0.6 mm
Ultra-Low Profile
– 0.35 mm Max Height
Integrated ESD Protection Diode
– Rated >4 kV HBM
– Rated >2 kV CDM
Lead and Halogen Free
RoHS Compliant TA = 25°C UNIT Drain-to-Source Voltage –20 V Qg Gate Charge Total (–4.5 V) 959 pC Qgd Gate Charge Gate-to-Drain RDS(on)
VGS(th) 161 Drain-to-Source On-Resistance pC VGS = –1.8 V 530 mΩ VGS = –2.5 V 338 mΩ VGS = –4.5 V 210 mΩ Threshold Voltage –0.95 V .
Ordering Information(1) 2 Applications TYPICAL VALUE VDS Device Qty CSD25483F4 3000 CSD25483F4T 250 Media Package Ship 7-Inch
Reel Femto (0402)
1.0 mm Г— 0.6 mm …