Datasheet Texas Instruments CSD85302L — 数据表
制造商 | Texas Instruments |
系列 | CSD85302L |
20 V双N沟道NexFET功率MOSFET
数据表
CSD85302L 20 V Dual N-Channel NexFETв„ў Power MOSFET datasheet
PDF, 413 Kb, 档案已发布: Nov 19, 2015
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价格
状态
CSD85302L | CSD85302LT | |
---|---|---|
Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes | No |
打包
CSD85302L | CSD85302LT | |
---|---|---|
N | 1 | 2 |
Pin | 4 | 4 |
Package Type | YME | YME |
Package QTY | 3000 | 250 |
Carrier | LARGE T&R | SMALL T&R |
Device Marking | 85302 | 85302 |
Width (mm) | 1.35 | 1.35 |
Length (mm) | 1.35 | 1.35 |
Thickness (mm) | .2 | .2 |
Mechanical Data | 下载 | 下载 |
参数化
Parameters / Models | CSD85302L | CSD85302LT |
---|---|---|
Configuration | Dual Common Drain | Dual Common Drain |
IDM, Max Pulsed Drain Current(Max), A | 37 | 37 |
Package, mm | LGA 1.35x1.35 | LGA 1.35x1.35 |
QG Typ, nC | 6.0 | 6.0 |
QGD Typ, nC | 1.4 | 1.4 |
RDS(on) Typ at VGS=4.5V, mOhm | 20 | 20 |
Rds(on) Max at VGS=4.5V, mOhms | 24 | 24 |
VDS, V | 20 | 20 |
VGS, V | 10 | 10 |
VGSTH Typ, V | 0.90 | 0.90 |
生态计划
CSD85302L | CSD85302LT | |
---|---|---|
RoHS | Compliant | Compliant |
模型线
系列: CSD85302L (2)
制造商分类
- Semiconductors> Power Management> Power MOSFET> N-Channel MOSFET Transistor