Datasheet Texas Instruments DRV411 — 数据表

制造商	Texas Instruments
系列	DRV411

闭环应用的霍尔效应磁传感器信号调理IC

数据表

PDF, 1.6 Mb, 修订版: B, 档案已发布: Dec 12, 2013

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	DRV411AIPWP	DRV411AIPWPR	DRV411AIRGPR	DRV411AIRGPT
Lifecycle Status	Active (Recommended for new designs)	Active (Recommended for new designs)	Active (Recommended for new designs)	Active (Recommended for new designs)
Manufacture's Sample Availability	Yes	No	Yes	No

	DRV411AIPWP	DRV411AIPWPR	DRV411AIRGPR	DRV411AIRGPT
N	1	2	3	4
Pin	20	20	20	20
Package Type	PWP	PWP	RGP	RGP
Industry STD Term	HTSSOP	HTSSOP	VQFN	VQFN
JEDEC Code	R-PDSO-G	R-PDSO-G	S-PQFP-N	S-PQFP-N
Package QTY	70	2000	3000	250
Carrier	TUBE	LARGE T&R	LARGE T&R	SMALL T&R
Device Marking	DRV411	DRV411	DRV411	DRV411
Width (mm)	4.4	4.4	4	4
Length (mm)	6.5	6.5	4	4
Thickness (mm)	1	1	.93	.93
Pitch (mm)	.65	.65	.5	.5
Max Height (mm)	1.2	1.2	1	1
Mechanical Data	下载	下载	下载	下载

Parameters / Models	DRV411AIPWP	DRV411AIPWPR	DRV411AIRGPR	DRV411AIRGPT
Architecture	Closed Loop	Closed Loop	Closed Loop	Closed Loop
Current Sensor Type	Hall-effect External	Hall-effect External	Hall-effect External	Hall-effect External
Gain Drift(Typ), ppm/C	1	1	1	1
Gain Error (+/-)(Max), %	0.3	0.3	0.3	0.3
Offset Drift(Max), uV/C	2	2	2	2
Offset Voltage (+/-), uV	100	100	100	100
Operating Temperature Range, C	-40 to 125	-40 to 125	-40 to 125	-40 to 125
Package Group	HTSSOP	HTSSOP	QFN	QFN
Package Size: mm2:W x L, PKG	20HTSSOP: 42 mm2: 6.4 x 6.5(HTSSOP)	20HTSSOP: 42 mm2: 6.4 x 6.5(HTSSOP)	20QFN: 16 mm2: 4 x 4(QFN)	20QFN: 16 mm2: 4 x 4(QFN)
Rating	Catalog	Catalog	Catalog	Catalog
Reference Accuracy (+/-)(Max), %	0.2	0.2	0.2	0.2
Reference Drift(Max)(, В±	50	50	50	50
Reference Voltage, V	1.65 / 2.5 / Ratiometric	1.65 / 2.5 / Ratiometric	1.65 / 2.5 / Ratiometric	1.65 / 2.5 / Ratiometric
System Bandwidth, KHz	2000	2000	2000	2000
Vs(Max), V	5.5	5.5	5.5	5.5
Vs(Min), V	2.7	2.7	2.7	2.7

	DRV411AIPWP	DRV411AIPWPR	DRV411AIRGPR	DRV411AIRGPT
RoHS	Compliant	Compliant	Compliant	Compliant

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Design Considerations for the DRV411
PDF, 181 Kb, 档案已发布: Feb 26, 2015
The DRV411 is a signal-conditioning integrated circuit for use in closed-loop, magnetic, current-sensor modules. The DRV411 is designed to interface with symmetrical indium antimonide (InSb) and gallium arsenide (GaAs) type Hall sensors. Symmetrical Hall elements have their input and output impedances closely matched. The DRV411 contains excitation and conditioning circuitry that significantly red

系列: DRV411 (4)