Datasheet Texas Instruments ISO5851DWR — 数据表

具有高CMTI和米勒钳位的16-SOIC增强型隔离式IGBT栅极驱动器-40至125

数据表

PDF, 1.5 Mb, 修订版: B, 档案已发布: Jan 16, 2017

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Lifecycle Status	Active (Recommended for new designs)
Manufacture's Sample Availability	No

DIN V VDE V 0884-10 Working Voltage	2121 Vpk
DIN V VDE V 0884-10 Transient Overvoltage Rating	8000 Vpk
Enable/Disable Function	N/A
Input VCC(Max)	5.5 V
Input VCC(Min)	3 V
Isolation Rating	5700 Vrms
Number of Channels	1
Operating Temperature Range	-40 to 125 C
Output VCC/VDD(Max)	30 V
Output VCC/VDD(Min)	15 V
Package Group	SOIC
Package Size: mm2:W x L	16SOIC: 106 mm2: 10.3 x 10.3(SOIC) PKG
Peak Output Current	5 A
Power Switch	IGBT,SiCFET
Prop Delay	76 ns
Prop Delay(Max)	110 ns

RoHS

Compliant

Evaluation Modules & Boards: ISO5851EVM
ISO5851 Evaluation Module (EVM)
Lifecycle Status: Active (Recommended for new designs)
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系列: ISO5851 (2)