Datasheet Texas Instruments ISO5851 — 数据表

制造商	Texas Instruments
系列	ISO5851

具有高CMTI和米勒钳位的增强型隔离式IGBT栅极驱动器

数据表

PDF, 1.5 Mb, 修订版: B, 档案已发布: Jan 16, 2017

从文件中提取

	ISO5851DW	ISO5851DWR
Lifecycle Status	Active (Recommended for new designs)	Active (Recommended for new designs)
Manufacture's Sample Availability	No	Yes

Parameters / Models	ISO5851DW	ISO5851DWR
DIN V VDE V 0884-10 Working Voltage, Vpk	2121	2121
DIN V VDE V 0884-10 Transient Overvoltage Rating, Vpk	8000	8000
Enable/Disable Function	N/A	N/A
Input VCC(Max), V	5.5	5.5
Input VCC(Min), V	3	3
Isolation Rating, Vrms	5700	5700
Number of Channels	1	1
Operating Temperature Range, C	-40 to 125	-40 to 125
Output VCC/VDD(Max), V	30	30
Output VCC/VDD(Min), V	15	15
Package Group	SOIC	SOIC
Package Size: mm2:W x L, PKG	16SOIC: 106 mm2: 10.3 x 10.3(SOIC)	16SOIC: 106 mm2: 10.3 x 10.3(SOIC)
Peak Output Current, A	5	5
Power Switch	IGBT,SiCFET	IGBT,SiCFET
Prop Delay, ns	76	76
Prop Delay(Max), ns	110	110

	ISO5851DW	ISO5851DWR
RoHS	Compliant	Compliant

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系列: ISO5851 (2)