Datasheet Texas Instruments ISO5852SQDWRQ1 — 数据表
| 制造商 | Texas Instruments |
| 系列 | ISO5852S-Q1 |
| 零件号 | ISO5852SQDWRQ1 |
高CMTI 2.5-A / 5-A隔离式IGBT，MOSFET栅极驱动器，具有分路输出和保护功能16-SOIC -40至125
数据表
ISO5852S-Q1 High-CMTI 2.5-A and 5-A Reinforced Isolated IGBT, MOSFET Gate Driver With Split Outputs and Active Protection Features datasheet
PDF, 1.7 Mb, 修订版: A, 档案已发布: Dec 22, 2016
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价格
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
打包
| Pin | 16 |
| Package Type | DW |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2000 |
| Carrier | LARGE T&R |
| Device Marking | ISO5852SQ |
| Width (mm) | 7.5 |
| Length (mm) | 10.3 |
| Thickness (mm) | 2.35 |
| Pitch (mm) | 1.27 |
| Max Height (mm) | 2.65 |
| Mechanical Data | 下载 |
参数化
| DIN V VDE V 0884-10 Working Voltage | 2121 Vpk |
| DIN V VDE V 0884-10 Transient Overvoltage Rating | 8000 Vpk |
| Enable/Disable Function | N/A |
| Input VCC(Max) | 5.5 V |
| Input VCC(Min) | 2.25 V |
| Isolation Rating | 5700 Vrms |
| Number of Channels | 1 |
| Operating Temperature Range | -40 to 125 C |
| Output VCC/VDD(Max) | 30 V |
| Output VCC/VDD(Min) | 15 V |
| Package Group | SOIC |
| Package Size: mm2:W x L | 16SOIC: 106 mm2: 10.3 x 10.3(SOIC) PKG |
| Peak Output Current | 5 A |
| Power Switch | IGBT |
| Prop Delay | 110 ns |
| Prop Delay(Max) | 110 ns |
生态计划
| RoHS | Compliant |
设计套件和评估模块
- Evaluation Modules & Boards: ISO5852SEVM
Reinforced Isolated IGBT Gate Driver Evaluation Module
Lifecycle Status: Active (Recommended for new designs)
模型线
系列: ISO5852S-Q1 (2)
- ISO5852SQDWQ1 ISO5852SQDWRQ1
制造商分类
- Semiconductors > Isolation > Isolated Gate Driver