Datasheet Texas Instruments LF347 — 数据表

制造商	Texas Instruments
系列	LF347

数据表

价格

状态

打包

参数化

Parameters / Models	LF347D	LF347DE4	LF347DG4	LF347DR	LF347DRG4	LF347N	LF347NE4
Additional Features	N/A	N/A	N/A	N/A	N/A	N/A	N/A
Architecture	FET	FET	FET	FET	FET	FET	FET
CMRR(Min), dB	70	70	70	70	70	70	70
CMRR(Typ), dB	100	100	100	100	100	100	100
GBW(Typ), MHz	3	3	3	3	3	3	3
Input Bias Current(Max), pA	200	200	200	200	200	200	200
Iq per channel(Max), mA	2.75	2.75	2.75	2.75	2.75	2.75	2.75
Iq per channel(Typ), mA	2	2	2	2	2	2	2
Number of Channels	4	4	4	4	4	4	4
Offset Drift(Typ), uV/C	10	10	10	10	10	10	10
Operating Temperature Range, C	0 to 70	0 to 70	0 to 70	0 to 70	0 to 70	0 to 70	0 to 70
Output Current(Typ), mA	31	31	31	31	31	31	31
Package Group	SOIC	SOIC	SOIC	SOIC	SOIC	PDIP	PDIP
Package Size: mm2:W x L, PKG	14SOIC: 52 mm2: 6 x 8.65(SOIC)	14SOIC: 52 mm2: 6 x 8.65(SOIC)	14SOIC: 52 mm2: 6 x 8.65(SOIC)	14SOIC: 52 mm2: 6 x 8.65(SOIC)	14SOIC: 52 mm2: 6 x 8.65(SOIC)	See datasheet (PDIP)	See datasheet (PDIP)
Rail-to-Rail	In to V+	In to V+	In to V+	In to V+	In to V+	In to V+	In to V+
Rating	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog
Slew Rate(Typ), V/us	13	13	13	13	13	13	13
Total Supply Voltage(Max), +5V=5, +/-5V=10	36	36	36	36	36	36	36
Total Supply Voltage(Min), +5V=5, +/-5V=10	7	7	7	7	7	7	7
Vn at 1kHz(Typ), nV/rtHz	18	18	18	18	18	18	18
Vos (Offset Voltage @ 25C)(Max), mV	10	10	10	10	10	10	10

生态计划

应用须知

• 下载
  Understanding Operational Amplifier Specifications
  PDF, 273 Kb, 档案已发布: Jul 13, 1998
  Selecting the right operational amplifier for a specific application requires you to have your design goals clearly in mind along with a firm understanding of what the published specifications mean. This paper addresses the issue of understanding data sheet specifications.This paper begins with background information. First introductory topics on the basic principles of amplifiers are presen
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  While in the process of reviewing Texas Instruments applications notes including those from Burr-Brown - I uncovered a couple of treasures this handbook on op amp applications and one on active RC networks. These old publications from 1963 and 1966 respectively are some of the finest works on op amp theory that I have ever seen. Nevertheless they contain some material that is hopelessly outd
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  PDF, 80 Kb, 档案已发布: May 2, 2004
  Application Note 447 Protection Schemes for BI-FET Amplifiers and Switches
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  PDF, 1.2 Mb, 修订版: B, 档案已发布: May 6, 2013
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  PDF, 1.1 Mb, 修订版: B, 档案已发布: May 6, 2013
  The availability of dual and quad packaged FET op amps offers the designer all the traditional capabilitiesof FET op amps including low bias current and speed and some additional advantages. The cost-peramplifieris lower because of reduced package costs. This means that more amplifiers are available toimplement a function at a given cost making design easier. At the same time the availab
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  PDF, 747 Kb, 修订版: C, 档案已发布: Apr 22, 2013
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  PDF, 262 Kb, 修订版: B, 档案已发布: May 6, 2013
  Of all common environmental parameters humidity is perhaps the least understood and most difficult tomeasure. The most common electronic humidity detection methods albeit highly accurate are not obviousand tend to be expensive and complex (See Box). Accurate humidity measurement is vital to a number ofdiverse areas including food processing paper and lumber production pollution monitor

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• Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> General-Purpose Op Amps