Datasheet Texas Instruments LF347B — 数据表

制造商	Texas Instruments
系列	LF347B

宽带JFET输入四路运算放大器

数据表

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PDF, 1.3 Mb, 修订版: C, 档案已发布: Mar 31, 2016

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价格

状态

	LF347BD	LF347BDR	LF347BN	LF347BNE4
Lifecycle Status	Active (Recommended for new designs)	Active (Recommended for new designs)	Active (Recommended for new designs)	Active (Recommended for new designs)
Manufacture's Sample Availability	No	No	No	No

打包

	LF347BD	LF347BDR	LF347BN	LF347BNE4
N	1	2	3	4
Pin	14	14	14	14
Package Type	D	D	N	N
Industry STD Term	SOIC	SOIC	PDIP	PDIP
JEDEC Code	R-PDSO-G	R-PDSO-G	R-PDIP-T	R-PDIP-T
Package QTY	50	2500	25	25
Carrier	TUBE	LARGE T&R	TUBE	TUBE
Device Marking	LF347B	LF347B	LF347BN	LF347BN
Width (mm)	3.91	3.91	6.35	6.35
Length (mm)	8.65	8.65	19.3	19.3
Thickness (mm)	1.58	1.58	3.9	3.9
Pitch (mm)	1.27	1.27	2.54	2.54
Max Height (mm)	1.75	1.75	5.08	5.08
Mechanical Data	下载	下载	下载	下载

参数化

Parameters / Models	LF347BD	LF347BDR	LF347BN	LF347BNE4
Additional Features	N/A	N/A	N/A	N/A
Architecture	FET	FET	FET	FET
CMRR(Min), dB	70	70	70	70
CMRR(Typ), dB	100	100	100	100
GBW(Typ), MHz	3	3	3	3
Input Bias Current(Max), pA	200	200	200	200
Iq per channel(Max), mA	2.75	2.75	2.75	2.75
Iq per channel(Typ), mA	2	2	2	2
Number of Channels	4	4	4	4
Offset Drift(Typ), uV/C	10	10	10	10
Operating Temperature Range, C	0 to 70	0 to 70	0 to 70	0 to 70
Output Current(Typ), mA	31	31	31	31
Package Group	SOIC	SOIC	PDIP	PDIP
Package Size: mm2:W x L, PKG	14SOIC: 52 mm2: 6 x 8.65(SOIC)	14SOIC: 52 mm2: 6 x 8.65(SOIC)	See datasheet (PDIP)	See datasheet (PDIP)
Rail-to-Rail	In to V+	In to V+	In to V+	In to V+
Rating	Catalog	Catalog	Catalog	Catalog
Slew Rate(Typ), V/us	13	13	13	13
Total Supply Voltage(Max), +5V=5, +/-5V=10	36	36	36	36
Total Supply Voltage(Min), +5V=5, +/-5V=10	7	7	7	7
Vn at 1kHz(Typ), nV/rtHz	18	18	18	18
Vos (Offset Voltage @ 25C)(Max), mV	5	5	5	5

生态计划

	LF347BD	LF347BDR	LF347BN	LF347BNE4
RoHS	Compliant	Compliant	Compliant	Compliant
Pb Free	Yes	Yes

应用须知

下载
AN-447 Protection Schemes for BI-FET Amplifiers and Switches
PDF, 80 Kb, 档案已发布: May 2, 2004
Application Note 447 Protection Schemes for BI-FET Amplifiers and Switches
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AN-301 Signal Conditioning for Sophisticated Transducers (Rev. B)
PDF, 1.2 Mb, 修订版: B, 档案已发布: May 6, 2013
This application note discusses signal conditioning and applications information for a diverse group ofsophisticated and unusual transducers.
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AN-262 Applying Dual and Quad FET Op Amps (Rev. B)
PDF, 1.1 Mb, 修订版: B, 档案已发布: May 6, 2013
The availability of dual and quad packaged FET op amps offers the designer all the traditional capabilitiesof FET op amps including low bias current and speed and some additional advantages. The cost-peramplifieris lower because of reduced package costs. This means that more amplifiers are available toimplement a function at a given cost making design easier. At the same time the availab
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AN-263 Sine Wave Generation Techniques (Rev. C)
PDF, 747 Kb, 修订版: C, 档案已发布: Apr 22, 2013
This application note describes the sine wave generation techniques to control frequency amplitude anddistortion levels.
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AN-256 Circuitry for Inexpensive Relative Humidity Measurement (Rev. B)
PDF, 262 Kb, 修订版: B, 档案已发布: May 6, 2013
Of all common environmental parameters humidity is perhaps the least understood and most difficult tomeasure. The most common electronic humidity detection methods albeit highly accurate are not obviousand tend to be expensive and complex (See Box). Accurate humidity measurement is vital to a number ofdiverse areas including food processing paper and lumber production pollution monitor
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Get More Power Out of Dual or Quad Op-Amps
PDF, 91 Kb, 档案已发布: Oct 2, 2002

模型线

系列: LF347B (4)

LF347BD LF347BDR LF347BN LF347BNE4

制造商分类

Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> General-Purpose Op Amps