Datasheet Texas Instruments LF353-N — 数据表

制造商	Texas Instruments
系列	LF353-N

宽带双路JFET输入运算放大器

数据表

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PDF, 1.0 Mb, 修订版: F, 档案已发布: Mar 25, 2013

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价格

状态

	LF353M	LF353M/NOPB	LF353MX	LF353MX/NOPB	LF353N/NOPB
Lifecycle Status	NRND (Not recommended for new designs)	Active (Recommended for new designs)	NRND (Not recommended for new designs)	Active (Recommended for new designs)	Active (Recommended for new designs)
Manufacture's Sample Availability	Yes	No	Yes	No	Yes

打包

	LF353M	LF353M/NOPB	LF353MX	LF353MX/NOPB	LF353N/NOPB
N	1	2	3	4	5
Pin	8	8	8	8	8
Package Type	D	D	D	D	P
Industry STD Term	SOIC	SOIC	SOIC	SOIC	PDIP
JEDEC Code	R-PDSO-G	R-PDSO-G	R-PDSO-G	R-PDSO-G	R-PDIP-T
Package QTY	95	95	2500	2500	40
Carrier	TUBE	TUBE	LARGE T&R	LARGE T&R	TUBE
Device Marking	LF353	M	LF353	LF353	LF
Width (mm)	3.91	3.91	3.91	3.91	6.35
Length (mm)	4.9	4.9	4.9	4.9	9.81
Thickness (mm)	1.58	1.58	1.58	1.58	3.9
Pitch (mm)	1.27	1.27	1.27	1.27	2.54
Max Height (mm)	1.75	1.75	1.75	1.75	5.08
Mechanical Data	下载	下载	下载	下载	下载

参数化

Parameters / Models	LF353M	LF353M/NOPB	LF353MX	LF353MX/NOPB	LF353N/NOPB
Additional Features	N/A	N/A	N/A	N/A	N/A
Architecture	FET	FET	FET	FET	FET
CMRR(Min), dB	70	70	70	70	70
CMRR(Typ), dB	100	100	100	100	100
GBW(Typ), MHz	4	4	4	4	4
Input Bias Current(Max), pA	200	200	200	200	200
Iq per channel(Max), mA	3.25	3.25	3.25	3.25	3.25
Iq per channel(Typ), mA	1.8	1.8	1.8	1.8	1.8
Number of Channels	2	2	2	2	2
Offset Drift(Typ), uV/C	10	10	10	10	10
Operating Temperature Range, C	0 to 70	0 to 70	0 to 70	0 to 70	0 to 70
Output Current(Typ), mA	20	20	20	20	20
Package Group	SOIC	SOIC	SOIC	SOIC	PDIP
Package Size: mm2:W x L, PKG	8SOIC: 29 mm2: 6 x 4.9(SOIC)	8SOIC: 29 mm2: 6 x 4.9(SOIC)	8SOIC: 29 mm2: 6 x 4.9(SOIC)	8SOIC: 29 mm2: 6 x 4.9(SOIC)	See datasheet (PDIP)
Rail-to-Rail	In to V+	In to V+	In to V+	In to V+	In to V+
Rating	Catalog	Catalog	Catalog	Catalog	Catalog
Slew Rate(Typ), V/us	13	13	13	13	13
Total Supply Voltage(Max), +5V=5, +/-5V=10	36	36	36	36	36
Total Supply Voltage(Min), +5V=5, +/-5V=10	10	10	10	10	10
Vn at 1kHz(Typ), nV/rtHz	16	16	16	16	16
Vos (Offset Voltage @ 25C)(Max), mV	10	10	10	10	10

生态计划

	LF353M	LF353M/NOPB	LF353MX	LF353MX/NOPB	LF353N/NOPB
RoHS	See ti.com	Compliant	See ti.com	Compliant	Compliant

应用须知

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AN-447 Protection Schemes for BI-FET Amplifiers and Switches
PDF, 80 Kb, 档案已发布: May 2, 2004
Application Note 447 Protection Schemes for BI-FET Amplifiers and Switches
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AN-262 Applying Dual and Quad FET Op Amps (Rev. B)
PDF, 1.1 Mb, 修订版: B, 档案已发布: May 6, 2013
The availability of dual and quad packaged FET op amps offers the designer all the traditional capabilitiesof FET op amps including low bias current and speed and some additional advantages. The cost-peramplifieris lower because of reduced package costs. This means that more amplifiers are available toimplement a function at a given cost making design easier. At the same time the availab
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AN-263 Sine Wave Generation Techniques (Rev. C)
PDF, 747 Kb, 修订版: C, 档案已发布: Apr 22, 2013
This application note describes the sine wave generation techniques to control frequency amplitude anddistortion levels.
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AN-256 Circuitry for Inexpensive Relative Humidity Measurement (Rev. B)
PDF, 262 Kb, 修订版: B, 档案已发布: May 6, 2013
Of all common environmental parameters humidity is perhaps the least understood and most difficult tomeasure. The most common electronic humidity detection methods albeit highly accurate are not obviousand tend to be expensive and complex (See Box). Accurate humidity measurement is vital to a number ofdiverse areas including food processing paper and lumber production pollution monitor
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Get More Power Out of Dual or Quad Op-Amps
PDF, 91 Kb, 档案已发布: Oct 2, 2002

模型线

系列: LF353-N (5)

LF353M LF353M/NOPB LF353MX LF353MX/NOPB LF353N/NOPB

制造商分类

Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> General-Purpose Op Amps