Datasheet Texas Instruments LM5113TME/NOPB — 数据表

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SNVS725H – JUNE 2011 – REVISED JANUARY 2018 LM5113 80-V, 1.2-A, 5-A, Half Bridge GaN Driver (NRND)
Not Recommended for New Designs 1 Features 3 Description The LM5113 device is designed to drive both the
high-side and the low-side enhancement mode
Gallium Nitride (GaN) FETs in a synchronous buck or
a half bridge configuration. The floating high-side
driver is capable of driving a high-side enhancement
mode GaN FET operating up to 100 V. The high-side
bias voltage is generated using a bootstrap technique
and is internally clamped at 5.2 V, which prevents the
gate voltage from exceeding the maximum gatesource voltage rating of enhancement mode GaN
FETs. The inputs of the LM5113 are TTL logic
compatible, and can withstand input voltages up to 14
V regardless of the VDD voltage. The LM5113 has
split gate outputs, providing flexibility to adjust the
turnon and turnoff strength independently. 1 Independent High-Side and Low-Side
TTL Logic Inputs
1.2 A / 5 A Peak Source / Sink Current …