Datasheet Texas Instruments LM5113 — 数据表
| 制造商 | Texas Instruments |
| 系列 | LM5113 |
用于增强模式GaN FET的100 V 1.2A / 5A半桥栅极驱动器
数据表
LM5113 100 V 1.2-A / 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs datasheet
PDF, 2.4 Mb, 修订版: G, 档案已发布: Oct 14, 2015
从文件中提取
价格
状态
| LM5113SD/NOPB | LM5113SDE/NOPB | LM5113SDX/NOPB | LM5113TME/NOPB | LM5113TMX/NOPB | |
|---|---|---|---|---|---|
| Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) | Active (Recommended for new designs) | Active (Recommended for new designs) | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes | No | Yes | Yes | Yes |
打包
| LM5113SD/NOPB | LM5113SDE/NOPB | LM5113SDX/NOPB | LM5113TME/NOPB | LM5113TMX/NOPB | |
|---|---|---|---|---|---|
| N | 1 | 2 | 3 | 4 | 5 |
| Pin | 10 | 10 | 10 | 12 | 12 |
| Package Type | DPR | DPR | DPR | YFX | YFX |
| Industry STD Term | WSON | WSON | WSON | DSBGA | DSBGA |
| JEDEC Code | S-PDSO-N | S-PDSO-N | S-PDSO-N | R-XBGA-N | R-XBGA-N |
| Package QTY | 1000 | 250 | 4500 | 250 | 3000 |
| Carrier | LARGE T&R | SMALL T&R | LARGE T&R | SMALL T&R | LARGE T&R |
| Device Marking | L5113 | L5113 | L5113 | 5113 | 5113 |
| Width (mm) | 4 | 4 | 4 | ||
| Length (mm) | 4 | 4 | 4 | ||
| Thickness (mm) | .75 | .75 | .75 | .42 | .42 |
| Pitch (mm) | .8 | .8 | .8 | .4 | .4 |
| Max Height (mm) | .8 | .8 | .8 | .675 | .675 |
| Mechanical Data | 下载 | 下载 | 下载 | 下载 | 下载 |
参数化
| Parameters / Models | LM5113SD/NOPB | LM5113SDE/NOPB | LM5113SDX/NOPB | LM5113TME/NOPB | LM5113TMX/NOPB |
|---|---|---|---|---|---|
| Bus Voltage, V | 90 | 90 | 90 | 90 | 90 |
| Driver Configuration | Dual,Independent | Dual,Independent | Dual,Independent | Dual,Independent | Dual,Independent |
| Fall Time, ns | 3.5 | 3.5 | 3.5 | 3.5 | 3.5 |
| Input Threshold | TTL | TTL | TTL | TTL | TTL |
| Input VCC(Max), V | 5.5 | 5.5 | 5.5 | 5.5 | 5.5 |
| Input VCC(Min), V | 4.5 | 4.5 | 4.5 | 4.5 | 4.5 |
| Number of Channels | 2 | 2 | 2 | 2 | 2 |
| Operating Temperature Range, C | -40 to 125 | -40 to 125 | -40 to 125 | -40 to 125 | -40 to 125 |
| Package Group | WSON | WSON | WSON | DSBGA | DSBGA |
| Package Size: mm2:W x L, PKG | See datasheet (WSON) | See datasheet (WSON) | See datasheet (WSON) | See datasheet (DSBGA) | See datasheet (DSBGA) |
| Peak Output Current, A | 5 | 5 | 5 | 5 | 5 |
| Power Switch | MOSFET,GaNFET | MOSFET,GaNFET | MOSFET,GaNFET | MOSFET,GaNFET | MOSFET,GaNFET |
| Prop Delay, ns | 30 | 30 | 30 | 30 | 30 |
| Rating | Catalog | Catalog | Catalog | Catalog | Catalog |
| Rise Time, ns | 7 | 7 | 7 | 7 | 7 |
生态计划
| LM5113SD/NOPB | LM5113SDE/NOPB | LM5113SDX/NOPB | LM5113TME/NOPB | LM5113TMX/NOPB | |
|---|---|---|---|---|---|
| RoHS | Compliant | Compliant | Compliant | Compliant | Compliant |
应用须知
- Design Considerations for LM5113 Advanced GaN FET Driver at High Frequency OperPDF, 572 Kb, 档案已发布: Sep 15, 2014
Design Considerations for LM5113 Advanced eGaN FET Driver at High Frequency Operation
模型线
系列: LM5113 (5)
制造商分类
- Semiconductors> Power Management> Gallium Nitride (GaN)В Solutions> GaN FET Drivers