Datasheet Texas Instruments LM5113-Q1 — 数据表
| 制造商 | Texas Instruments |
| 系列 | LM5113-Q1 |
汽车类，增强型GaN FET的100V 1.2A / 5A半桥栅极驱动器
数据表
LM5113-Q1 100-V, 1.2-A, 5-A, Half-Bridge Gate Driver for Enhancement Mode GaN FETs datasheet
PDF, 2.3 Mb, 档案已发布: Mar 19, 2017
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价格
状态
| LM5113QDPRRQ1 | |
|---|---|
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
打包
| LM5113QDPRRQ1 | |
|---|---|
| N | 1 |
| Pin | 10 |
| Package Type | DPR |
| Industry STD Term | WSON |
| JEDEC Code | S-PDSO-N |
| Package QTY | 4500 |
| Carrier | LARGE T&R |
| Device Marking | L5113Q |
| Width (mm) | 4 |
| Length (mm) | 4 |
| Thickness (mm) | .75 |
| Pitch (mm) | .8 |
| Max Height (mm) | .8 |
| Mechanical Data | 下载 |
参数化
| Parameters / Models | LM5113QDPRRQ1 |
|---|---|
| Bus Voltage, V | 90 |
| Driver Configuration | Dual Independent |
| Fall Time, ns | 3.5 |
| Input Threshold | TTL |
| Input VCC(Max), V | 5.5 |
| Input VCC(Min), V | 4.5 |
| Number of Channels | 2 |
| Operating Temperature Range, C | -40 to 125 |
| Package Group | WSON |
| Package Size: mm2:W x L, PKG | See datasheet (WSON) |
| Peak Output Current, A | 5 |
| Power Switch | MOSFET,GaNFET |
| Prop Delay, ns | 30 |
| Rating | Automotive |
| Rise Time, ns | 7 |
生态计划
| LM5113QDPRRQ1 | |
|---|---|
| RoHS | Compliant |
模型线
系列: LM5113-Q1 (1)
制造商分类
- Semiconductors> Power Management> Gallium Nitride (GaN)В Solutions> GaN FET Drivers