Datasheet Texas Instruments PTH12010YAH — 数据表
| 制造商 | Texas Instruments |
| 系列 | PTH12010Y |
| 零件号 | PTH12010YAH |
用于DDR / QDR存储器的15 A 12 V输入总线终端电源模块10贯穿式模块-40至85
数据表
15-A Non-Isolated DDR/SDR Bus Termination Modules datasheet
PDF, 772 Kb, 修订版: A, 档案已发布: Apr 29, 2005
从文件中提取
价格
状态
| Lifecycle Status | Active (Recommended for new designs) |
| Manufacture's Sample Availability | Yes |
打包
| Pin | 10 |
| Package Type | EUH |
| Industry STD Term | Through-Hole Module |
| JEDEC Code | R-PDSS-T |
| Package QTY | 25 |
| Carrier | TIW TRAY |
| Width (mm) | 15.75 |
| Length (mm) | 34.8 |
| Thickness (mm) | 8.75 |
| Pitch (mm) | 3.175 |
| Max Height (mm) | 9 |
| Mechanical Data | 下载 |
参数化
| Control Mode | Voltage Mode |
| DDR Memory Type | DDR,DDR2,DDR3 |
| Iout VTT(Max) | 6 A |
| Iq(Typ) | 10 mA |
| Operating Temperature Range | -40 to 85 C |
| Output | VTT |
| Package Group | Through-Hole Module |
| Package Size: mm2:W x L | 10Through-Hole Module: 600 mm2: 16.76 x 35.81(Through-Hole Module) PKG |
| Rating | Catalog |
| Regulator Type | Step-Down Module |
| Special Features | Shutdown Pin for S3 |
| Vin Bias(Max) | 13.2 V |
| Vin Bias(Min) | 10.8 V |
| Vin(Max) | 13.2 V |
| Vin(Min) | 10.8 V |
| Vout VTT(Min) | 0.55 V |
生态计划
| RoHS | Not Compliant |
应用须知
- New power modules improve surface-mount manufacturabilityPDF, 1.1 Mb, 档案已发布: Jul 14, 2005
- High-Temperatures Soldering Requirements for Plug-in Power, Surface-Mount Pdts (Rev. A)PDF, 112 Kb, 修订版: A, 档案已发布: Aug 13, 2009
- Input and Output Capacitor SelectionPDF, 219 Kb, 档案已发布: Sep 19, 2005
模型线
系列: PTH12010Y (3)
- PTH12010YAH PTH12010YAST PTH12010YAZ
制造商分类
- Semiconductors > Power Management > DDR Memory Power Solutions