Datasheet Texas Instruments TLV2316 — 数据表
制造商 | Texas Instruments |
系列 | TLV2316 |
适用于成本敏感型系统的10MHz,低噪声,RRIO,CMOS运算放大器
数据表
TLVx316 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifiers datasheet
PDF, 1.8 Mb, 修订版: A, 档案已发布: Sep 23, 2016
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价格
状态
TLV2316IDGKR | TLV2316IDGKT | TLV2316IDR | |
---|---|---|---|
Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes | Yes | No |
打包
TLV2316IDGKR | TLV2316IDGKT | TLV2316IDR | |
---|---|---|---|
N | 1 | 2 | 3 |
Pin | 8 | 8 | 8 |
Package Type | DGK | DGK | D |
Industry STD Term | VSSOP | VSSOP | SOIC |
JEDEC Code | R-PDSO-G | R-PDSO-G | R-PDSO-G |
Package QTY | 2500 | 250 | 2500 |
Carrier | LARGE T&R | SMALL T&R | LARGE T&R |
Device Marking | 12X6 | 12X6 | V2316 |
Width (mm) | 3 | 3 | 3.91 |
Length (mm) | 3 | 3 | 4.9 |
Thickness (mm) | .97 | .97 | 1.58 |
Pitch (mm) | .65 | .65 | 1.27 |
Max Height (mm) | 1.07 | 1.07 | 1.75 |
Mechanical Data | 下载 | 下载 | 下载 |
参数化
Parameters / Models | TLV2316IDGKR | TLV2316IDGKT | TLV2316IDR |
---|---|---|---|
Additional Features | Cost Optimized,EMI Hardened | Cost Optimized,EMI Hardened | Cost Optimized,EMI Hardened |
Architecture | CMOS | CMOS | CMOS |
CMRR(Min), dB | 72 | 72 | 72 |
CMRR(Typ), dB | 90 | 90 | 90 |
GBW(Typ), MHz | 10 | 10 | 10 |
Iq per channel(Max), mA | 575 | 575 | 575 |
Iq per channel(Typ), mA | 0.4 | 0.4 | 0.4 |
Number of Channels | 2 | 2 | 2 |
Offset Drift(Typ), uV/C | 2 | 2 | 2 |
Operating Temperature Range, C | -40 to 125 | -40 to 125 | -40 to 125 |
Output Current(Typ), mA | 50 | 50 | 50 |
Package Group | VSSOP | VSSOP | SOIC |
Package Size: mm2:W x L, PKG | 8VSSOP: 15 mm2: 4.9 x 3(VSSOP) | 8VSSOP: 15 mm2: 4.9 x 3(VSSOP) | 8SOIC: 29 mm2: 6 x 4.9(SOIC) |
Rail-to-Rail | In,Out | In,Out | In,Out |
Rating | Catalog | Catalog | Catalog |
Slew Rate(Typ), V/us | 6 | 6 | 6 |
Total Supply Voltage(Max), +5V=5, +/-5V=10 | 5.5 | 5.5 | 5.5 |
Total Supply Voltage(Min), +5V=5, +/-5V=10 | 1.8 | 1.8 | 1.8 |
Vn at 1kHz(Typ), nV/rtHz | 12 | 12 | 12 |
Vos (Offset Voltage @ 25C)(Max), mV | 3 | 3 | 3 |
生态计划
TLV2316IDGKR | TLV2316IDGKT | TLV2316IDR | |
---|---|---|---|
RoHS | Compliant | Compliant | Compliant |
模型线
系列: TLV2316 (3)
制造商分类
- Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> General-Purpose Op Amps