Datasheet Texas Instruments TLV316-Q1 — 数据表
制造商 | Texas Instruments |
系列 | TLV316-Q1 |
10MHz,轨至轨输入/输出,低压,1.8V CMOS运算放大器
数据表
TLVx316-Q1 10-MHz, Rail-to-Rail Input/Output, Low-Voltage, 1.8-V CMOS Operational Amplifiers datasheet
PDF, 1.5 Mb, 修订版: B, 档案已发布: Aug 29, 2017
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价格
状态
TLV316QDBVRQ1 | TLV316QDBVTQ1 | |
---|---|---|
Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
Manufacture's Sample Availability | No | Yes |
打包
TLV316QDBVRQ1 | TLV316QDBVTQ1 | |
---|---|---|
N | 1 | 2 |
Pin | 5 | 5 |
Package Type | DBV | DBV |
Industry STD Term | SOT-23 | SOT-23 |
JEDEC Code | R-PDSO-G | R-PDSO-G |
Package QTY | 3000 | 250 |
Carrier | LARGE T&R | SMALL T&R |
Device Marking | 16ND | 16ND |
Width (mm) | 1.6 | 1.6 |
Length (mm) | 2.9 | 2.9 |
Thickness (mm) | 1.2 | 1.2 |
Pitch (mm) | .95 | .95 |
Max Height (mm) | 1.45 | 1.45 |
Mechanical Data | 下载 | 下载 |
参数化
Parameters / Models | TLV316QDBVRQ1 | TLV316QDBVTQ1 |
---|---|---|
Additional Features | Cost Optimized,EMI Hardened | Cost Optimized,EMI Hardened |
Architecture | CMOS | CMOS |
CMRR(Min), dB | 72 | 72 |
CMRR(Typ), dB | 90 | 90 |
GBW(Typ), MHz | 10 | 10 |
Iq per channel(Max), mA | 575 | 575 |
Iq per channel(Typ), mA | 0.4 | 0.4 |
Number of Channels | 1 | 1 |
Offset Drift(Typ), uV/C | 2 | 2 |
Operating Temperature Range, C | -40 to 125 | -40 to 125 |
Output Current(Typ), mA | 50 | 50 |
Package Group | SOT-23 | SOT-23 |
Package Size: mm2:W x L, PKG | 5SOT-23: 8 mm2: 2.8 x 2.9(SOT-23) | 5SOT-23: 8 mm2: 2.8 x 2.9(SOT-23) |
Rail-to-Rail | In,Out | In,Out |
Rating | Automotive | Automotive |
Slew Rate(Typ), V/us | 6 | 6 |
Total Supply Voltage(Max), +5V=5, +/-5V=10 | 5.5 | 5.5 |
Total Supply Voltage(Min), +5V=5, +/-5V=10 | 1.8 | 1.8 |
Vn at 1kHz(Typ), nV/rtHz | 12 | 12 |
Vos (Offset Voltage @ 25C)(Max), mV | 3 | 3 |
生态计划
TLV316QDBVRQ1 | TLV316QDBVTQ1 | |
---|---|---|
RoHS | Compliant | Compliant |
模型线
系列: TLV316-Q1 (2)
制造商分类
- Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> General-Purpose Op Amps