Datasheet Texas Instruments TLV521 — 数据表
制造商 | Texas Instruments |
系列 | TLV521 |
350nA纳瓦级,单路,RRIO,CMOS输入,运算放大器,用于成本敏感型系统
数据表
TLV521 NanoPower, 350nA, RRIO, CMOS Input, Operational Amplifier datasheet
PDF, 1.3 Mb, 档案已发布: May 20, 2016
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价格
状态
TLV521DCKR | TLV521DCKT | |
---|---|---|
Lifecycle Status | Active (Recommended for new designs) | Active (Recommended for new designs) |
Manufacture's Sample Availability | Yes | No |
打包
TLV521DCKR | TLV521DCKT | |
---|---|---|
N | 1 | 2 |
Pin | 5 | 5 |
Package Type | DCK | DCK |
Industry STD Term | SOT-SC70 | SOT-SC70 |
JEDEC Code | R-PDSO-G | R-PDSO-G |
Package QTY | 3000 | 250 |
Carrier | LARGE T&R | SMALL T&R |
Device Marking | 14F | 14F |
Width (mm) | 1.25 | 1.25 |
Length (mm) | 2 | 2 |
Thickness (mm) | .9 | .9 |
Pitch (mm) | .65 | .65 |
Max Height (mm) | 1.1 | 1.1 |
Mechanical Data | 下载 | 下载 |
参数化
Parameters / Models | TLV521DCKR | TLV521DCKT |
---|---|---|
Additional Features | Cost Optimized,EMI Hardened | Cost Optimized,EMI Hardened |
Architecture | CMOS | CMOS |
CMRR(Min), dB | 70 | 70 |
CMRR(Typ), dB | 100 | 100 |
GBW(Typ), MHz | 0.006 | 0.006 |
Iq per channel(Max), mA | 0.0005 | 0.0005 |
Iq per channel(Typ), mA | 0.00035 | 0.00035 |
Number of Channels | 1 | 1 |
Offset Drift(Typ), uV/C | 1.5 | 1.5 |
Operating Temperature Range, C | -40 to 125 | -40 to 125 |
Output Current(Typ), mA | 12 | 12 |
Package Group | SC70 | SC70 |
Package Size: mm2:W x L, PKG | 5SC70: 4 mm2: 2.1 x 2(SC70) | 5SC70: 4 mm2: 2.1 x 2(SC70) |
Rail-to-Rail | In,Out | In,Out |
Rating | Catalog | Catalog |
Slew Rate(Typ), V/us | 0.0029 | 0.0029 |
Total Supply Voltage(Max), +5V=5, +/-5V=10 | 5.5 | 5.5 |
Total Supply Voltage(Min), +5V=5, +/-5V=10 | 1.7 | 1.7 |
Vn at 1kHz(Typ), nV/rtHz | 300 | 300 |
Vos (Offset Voltage @ 25C)(Max), mV | 3 | 3 |
生态计划
TLV521DCKR | TLV521DCKT | |
---|---|---|
RoHS | Compliant | Compliant |
模型线
系列: TLV521 (2)
制造商分类
- Semiconductors> Amplifiers> Operational Amplifiers (Op Amps)> Ultra-Low-Power Op Amps (<=250uA)